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Damien Risaletto

Affiliation : Centre National de la Recherche Scientifique

2Publications (affiliation in France)
27Total publications
134Citations
7h-index

Research profile

Damien Risaletto has 2 indexed publications (2006–2007). Their work appears mainly in “European Conference on Power Electronics and Applications” and “Superlattices and Microstructures”. Their most cited article, “A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices” (2006), has been cited 10 times. Their work is co-authored with at least 6 researchers, including institutions in Tunisia.

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Research areas

Silicon Carbide Semiconductor Technologies
Advanced DC-DC Converters
Multilevel Inverters and Converters
Electromagnetic Compatibility and Noise Suppression
Electric Power Systems and Control

Publications (2)

Electrical characterization of 5kV SiC bipolar diodes in switching transient regime
2007 · European Conference on Power Electronics and Applications · cited 4 times
A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices
2006 · Superlattices and Microstructures · cited 10 times

Publication venues

European Conference on Power Electronics and Applications × 1
Superlattices and Microstructures × 1

Publications per year

20071
20061

Collaborations

Partner institutions : Institut National des Sciences Appliquées de Lyon · University of Monastir

Co-authors’ countries : Tunisia

Co-authors

Bibliographic data from OpenAlex (open database).