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M. Handami

Affiliation : Tissemsilt University

• 1Publications (affiliation in Algeria)
• 1Total publications
• 11Citations
• 1h-index

OpenAlex

Research profile

M. Handami has 1 indexed publication (2023). Their work appears in “Revista Mexicana de Física”. Their most cited article, “Improved electrical characteristics of AlxGa1−xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters” (2023), has been cited 11 times. Their work is co-authored with at least 3 researchers.

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Research areas

• GaN-based semiconductor devices and materials
• Silicon Carbide Semiconductor Technologies
• Advancements in Semiconductor Devices and Circuit Design

Publications (1)

• Improved electrical characteristics of AlxGa1−xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters
  2023 · Revista Mexicana de Física · cited 11 times

Collaborations

Partner institutions : Amar Telidji University of Laghouat · Ziane Achour University of Djelfa

Co-authors

• Abdelaziz Rabehi
• Abdelmalek Douara
• Oussama Baitiche

Bibliographic data from OpenAlex (open database).