Home › Researcher directory › N.E. Bourzgui
N.E. Bourzgui
Affiliation : Centre National de la Recherche Scientifique · Institut d'Electronique, de Microélectronique et de Nanotechnologie
- 7Publications (affiliation in France)
- 76Total publications
- 233Citations
- 10h-index
Research profile
N.E. Bourzgui has 7 indexed publications (2014–2022). Their work appears mainly in “Applied Physics Letters”, “IEEE Transactions on Electron Devices” and “IEEE Transactions on Nanotechnology”. Their most cited article, “A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs” (2020), has been cited 23 times. 4 of these publications date from the last three years of activity. Their work is co-authored with at least 12 researchers, including institutions in Canada, United Kingdom, Japan, United States.
Is this you? Get your research seen
Create your free DzCademia profile and add your articles: they will show up more easily on Google and in AI assistants like ChatGPT, so more people can read and cite your work.
Create my free profile Add my publicationsResearch areas
- Microfluidic and Capillary Electrophoresis Applications
- Microwave and Dielectric Measurement Techniques
- Terahertz technology and applications
- GaN-based semiconductor devices and materials
- Advanced MEMS and NEMS Technologies
Publications (7)
- Dual role of 3C-SiC interlayer on DC and RF isolation of GaN/Si-based devices
- A cost-effective technology to improve power performance of nanoribbons GaN HEMTs
- A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs
- Mechanisms of a Rectifying TiN Gate Contact for AlGaN$/$GaN HEMTs on Silicon Substrate
- Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate
- High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping
- Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range
Publication venues
- Applied Physics Letters × 3
- IEEE Transactions on Electron Devices × 1
- IEEE Transactions on Nanotechnology × 1
- ECS Journal of Solid State Science and Technology × 1
- Journal of Applied Physics × 1
Publications per year
- 20222
- 20202
- 20171
- 20142
Collaborations
Partner institutions : Liverpool John Moores University · Université de Sherbrooke · Georgia Institute of Technology · Georgia Tech-CNRS Laboratory · Institut interdisciplinaire d'innovation technologique
Co-authors’ countries : Canada · United Kingdom · Japan · United States
Co-authors
- Ali Soltani
- Jean-Claude Gerbedoen
- Hassan Maher
- B. Benbakhti
- M. Boucherta
- A. Ougazzaden
- Hassane Ouazzani Chahdi
- J.C. de Jaeger
- Abdelkrim Khediri
- Hassan Ali Barkad
- Gilles Patriarche
- A. El Hadi Khediri
Bibliographic data from OpenAlex (open database).
Why choose Dzcademia?
Profiles, articles and conference contributions: give your research a structured public presence. Integrated metadata help search engines and AI assistants identify your work and understand its references.
Comment with Google
Sign in with Google to comment directly on this page.