Accueil › Annuaire des chercheurs › Hachemi Bouridah
Hachemi Bouridah
Affiliation : University of Jijel
- 32Publications (affiliation algérienne)
- 38Publications au total
- 158Citations
- 7Indice h
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Créer mon profil gratuit Ajouter mes publicationsDomaines de recherche
- Silicon and Solar Cell Technologies
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Semiconductor materials and interfaces
Publications (32)
- Study of Structural, Electrical and Optical Characteristics of Boron Implanted Silicon Nanocrystals Embedded in SiNx Matrix
- Predictive Control of Surface Roughness as a Function of Temperature in a SiNx Thin Film Deposition Process Using the Kinetic Monte Carlo Method
- Modeling and Control of SiNx Film Growth using the Kinetic Monte Carlo Method: Impact of Gas Flow Rate on Surface Roughness and Film Thickness
- CORRELATION BETWEEN ELECTRICAL AND OPTICAL PROPERTIES OF DOPED SILICON NANOCRYSTALS
- COMPARATIVE STUDY OF THE RECOMBINANT ACTIVITY EFFECT AT THE GRAIN BOUNDARIES IN SILICON SOLAR CELLS
- Probing carrier concentration in gated single, bi- and tri-layer CVD graphene using Raman spectroscopy
- Determination of the size dispersion of amorphous silicon quantum dots from a silicon nitride film containing silicon nanocrystals
- Experimental study of n-type porous silicon obtained under illumination
- Theoretical study of electroluminescence from device based on silicon nanocrystals
- Structural characterization determination of silicon nanocrystals embedded in amorphous silicon nitride matrix from the effect of the light scattering
- Structural study of amorphous silicon nitride matrix containing silicon nanocrystals
- Analytical Threshold Voltage Model Considering Quantum Size Effects for Nanocrystalline Silicon Thin Film Transistors
- Effect of the reflection by the silicon aggregates on the photoluminescence from silicon nitride film embedded silicon nanocrystals
- A novel numerical technique for simultaneous calculations of type II phase matching angle and temperature for second harmonic generation in negative uniaxial crystals
- WITHDRAWN: Investigation of the origin of linear and nonlinear electrical behaviors of back gated monolayer graphene ribbons: Electrical and Raman monitoring
- Photoluminescence from silicon nanocrystals embedded in silicon nitride fabricated by low-pressure chemical vapor deposition followed by high-temperature annealing
- Study of two dimensional photonic crystal nanocavities based on Gallium Nitride (GaN)
- Kinetic Monte Carlo simulation of low-pressure chemical vapor deposition of silicon nitride: Impact of gas flow rate and temperature on silicon cluster size and density
- Theoretical determination of the impact of channel morphology and quantum size effects on the surface potential of nanocrystalline silicon thin film transistors
- Monte Carlo simulation of silicon nanocrystal formation in the presence of impurities in a SiN x matrix
- Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films
- Study of Silicon Nanocrystals Formation in Annealed Amorphous In Situ Nitrogen Doped Silicon Thin Films Obtained by Low Pressure Chemical Vapor Deposition
- Compact Modeling for Submicron Fully Depleted SOI MOSFET's
- Theoretical Study of Photonic Band Gap in the SiGe
- Study of grains size distribution and electrical activity of heavily boron doped polysilicon thin films
- Nitrogen doped silicon films heavily boron implanted for MOS structures: Simulation and characterization
- Electrical and morphological characteristics of amorphous LPCVD Nitrogen Doped Silicon thin films after heat treatment
- Effect of thermal annealing and nitrogen content on amorphous silicon thin‐film crystallization
- Application of a Radial Basis Function Neural Network for the Inverse Electromagnetic Problem of Parameter Identification
- Effect of Nitrogen on Boron doped Polysilicon Thin Films Properties
- Study of electrical and structural properties of boron doped polysilicon films with a low nitrogen content
- Study of nitrogen doped silicon films used for p+ polysilicon gates
Co-auteurs
- Mahmoud Riad Beghoul
- Riad Remmouche
- Farida Mansour
- Hakim Haoues
- Noureddine Boutaoui
- Nadjet Hafsi
- Adil Bouhadiche
- R. Mahamdi
- Rachid Fates
- Ramdane Mahamdi
- Soulef Benghorieb
- Nabil Ikhlef
Données bibliographiques issues d’OpenAlex (base ouverte).
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