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Riad Remmouche

Affiliation : University of Jijel

• 16Publications (affiliation algérienne)
• 18Publications au total
• 54Citations
• 5Indice h

ORCIDOpenAlex

Domaines de recherche

• Silicon Nanostructures and Photoluminescence
• Advancements in Semiconductor Devices and Circuit Design
• Thin-Film Transistor Technologies
• Silicon and Solar Cell Technologies
• Graphene research and applications

Publications (16)

• Study of Structural, Electrical and Optical Characteristics of Boron Implanted Silicon Nanocrystals Embedded in SiNx Matrix
  2026 · Silicon
• Predictive Control of Surface Roughness as a Function of Temperature in a SiNx Thin Film Deposition Process Using the Kinetic Monte Carlo Method
  2025 · Acta Physica Polonica A · cité 1 fois
• Investigation of Electrical Behavior in Back Gated Graphene FET
  2025 · Materials Science
• Evolution of the Raman spectra features of defective monolayer graphene in back-gate configuration: Experimental study
  2023 · Diamond and Related Materials · cité 7 fois
• Modeling and Control of SiNx Film Growth using the Kinetic Monte Carlo Method: Impact of Gas Flow Rate on Surface Roughness and Film Thickness
  2023 · Silicon · cité 2 fois
• Electrical Characteristics of Single Layer Graphene Ribbons in a Wide Temperature Range
  2023 · Materials Science · cité 1 fois
• CORRELATION BETWEEN ELECTRICAL AND OPTICAL PROPERTIES OF DOPED SILICON NANOCRYSTALS
  2023 · Materiali in tehnologije
• Modelling the Quantum Capacitance of Single-layer and Bilayer Graphene
  2023 · Materials Science
• Experimental study of n-type porous silicon obtained under illumination
  2018 · Optik · cité 3 fois
• Analytical Threshold Voltage Model Considering Quantum Size Effects for Nanocrystalline Silicon Thin Film Transistors
  2017 · Acta Physica Polonica A · cité 2 fois
• Theoretical determination of the impact of channel morphology and quantum size effects on the surface potential of nanocrystalline silicon thin film transistors
  2014 · Materials Science in Semiconductor Processing · cité 3 fois
• Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films
  2013 · Materials Science in Semiconductor Processing · cité 11 fois
• Study of Silicon Nanocrystals Formation in Annealed Amorphous In Situ Nitrogen Doped Silicon Thin Films Obtained by Low Pressure Chemical Vapor Deposition
  2012 · Acta Physica Polonica A · cité 8 fois
• Passivity-based control of the new hyperchaotic system
  2012 · International Journal of Modelling Identification and Control · cité 7 fois
• Compact Modeling for Submicron Fully Depleted SOI MOSFET's
  2012 · Acta Physica Polonica A · cité 3 fois
• A static model for the SOI TMOS in strong inversion
  1998 · Microelectronic Engineering · cité 1 fois

Revues de publication

• Acta Physica Polonica A × 4
• Materials Science × 3
• Silicon × 2
• Materials Science in Semiconductor Processing × 2
• Diamond and Related Materials × 1
• Materiali in tehnologije × 1

Publications par année

• 20261
• 20252
• 20235
• 20181
• 20171
• 20141
• 20131
• 20123
• 19981

Collaborations

Établissements partenaires : Centre de Développement des Technologies Avancées · University Frères Mentouri Constantine 1 · University Ferhat Abbas of Setif

Co-auteurs

• Hachemi Bouridah
• Mahmoud Riad Beghoul
• Rachid Fates
• Hakim Haoues
• Toufik BENKEDIDAH
• Adil Bouhadiche
• Farida Mansour
• Soulef Benghorieb
• Noureddine Boutaoui
• Yousra AMMOUR
• Nidal Beltas
• S. Benzeghda

Données bibliographiques issues d’OpenAlex (base ouverte).