Accueil › Annuaire des chercheurs › A. Souifi
A. Souifi
Affiliation : Centre National de la Recherche Scientifique · Institut National des Sciences Appliquées de Lyon
- 38Publications (affiliation française)
- 254Publications au total
- 2069Citations
- 24Indice h
C’est vous ? Faites connaître vos travaux
Créez gratuitement votre profil DzCademia et ajoutez vos articles : ils apparaîtront plus facilement sur Google et dans les assistants d’IA comme ChatGPT. Plus de personnes pourront vous lire et vous citer.
Créer mon profil gratuit Ajouter mes publicationsDomaines de recherche
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Nanostructures and Photoluminescence
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
Publications (38)
- Thermal influence on the current–voltage characteristics of TiN/Al2O3/p-Si MIS devices for emerging nanotechnology applications
- Individual silicon nanocrystals photo-current response confirming the quantum single charge residence on single electron nanopixel devices
- O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate
- Study of Miniaturization of a Silicon Vapor Chamber for Compact 3D Microelectronics, via a Hybrid Analytical and Finite Element Method
- MOCVD grown InAs/GaAs quantum dots on GaAs and Ge/Si substrates
- Interface traps contribution on transport mechanisms under illumination in metal–oxide–semiconductor structures based on silicon nanocrystals
- Photo-active traps effect on photo-detection time of single electron photodetector
- Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics
- High temperature and voltage dependent electrical and dielectric properties of TiN/Al2O3/p-Si MIS structure
- Interface traps effect on the charge transport mechanisms in metal oxide semiconductor structures based on silicon nanocrystals
- Effect of annealing time on the performance of tin oxide thin films ultraviolet photodetectors
- The important contribution of photo-generated charges to the silicon nanocrystals photo-charging/discharging-response time at room temperature in MOS-photodetectors
- Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector
- The important contribution of photo-generated charges to the silicon nanocrystals photo-charging/discharging-response time at room temperature in MOS-photodetectors
- Impact of defect on I(V) instabilities observed on Ti/4H–SiC high voltage Schottky diodes
- Traps contribution on detection time of single electron photodetector (Photo-SET)
- Electrical Analysis of Indium Deep Levels Effects on Kink Phenomena of Silicon NMOSFETs
- Analysis of the relationship between the kink effect and the indium levels in MOS transistors
- Effect of illumination on the electron transport mechanisms in Silicon nanocrystal-based nanopixels
- Quantum dot application for single charge detection
- Study of photogenerated traps in nanopixels by random telegraph signal and low frequency noise
- Analysis of photogenerated random telegraph signal in single electron detector (photo-SET)
- Concept of new photodetector based on single electron transistor for single charge detection
- Single photon counting with two quantum dots capacitively coupled
- Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator
- A SPICE Model for Single Electron Transistor Applications at Low Temperatures: Inverter and Ring Oscillator
- Macro-modeling for the compact simulation of single electron transistor using SIMPLORER
- A new SIMPLORER model for single-electron transistors
- Influence of interface states and deep levels on output characteristics of InAlAs/InGaAs/InP HEMTs
- Blue/green luminescence based on Zn(S)Se/GaAs heterostructures
- Traps identification in silicon nanocrystals memories by low noise technique
- Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications
- Band-Alignment of ZnSe/ZnSSe Based Layer Structures for Light Emitting Devices, Determination by Photocurrent Measurements
- I–V anomalies on InAlAs/InGaAs/InP HFETs and deep levels investigations
- Correlation between static characteristics and deep levels in InAlAs/InGaAs/InP HEMT'S
- Fabrication of (NH4)2S passivated GaAs metal-insulator-semiconductor devices using low-frequency plasma-enhanced chemical vapor deposition
- DLTS and PL study of defects in InAlAs/InP heterojunctions grown by metal organic chemical vapor deposition
- Numerical simulation of photorefractive gain in CdTe:V with optimum frequency of the electric field
Co-auteurs
- Nabil Sghaier
- L. Militaru
- Nicolas Baboux
- Sylvain David
- Nicolas Chauvin
- M. Troudi
- J. Moeyaert
- Vincent Aimez
- Bassem Salem
- Oumaïma Abouzaid
- T. Baron
- Jean‐Marie Bluet
Données bibliographiques issues d’OpenAlex (base ouverte).
Pourquoi choisir Dzcademia ?
Pour donner à vos travaux plus de chances d’être découverts et recommandés par les IA. Profils, articles et communications : donnez à votre recherche une présence publique structurée. Les métadonnées intégrées aident les moteurs de recherche et les assistants IA à identifier vos travaux et à comprendre leurs références.
Commenter avec Google
Connecte-toi avec Google pour commenter directement sur cette page.