Accueil › Annuaire des chercheurs › O. Khaldi
O. Khaldi
Affiliation : Tunis El Manar University · Tunis University
- 23Publications (affiliation tunisienne)
- 28Publications au total
- 341Citations
- 11Indice h
Profil de recherche
O. Khaldi compte 23 publications référencées (2013–2025). Ses travaux paraissent principalement dans « Applied Physics A », « Nanomaterials » et « Ceramics International ». Son article le plus cité, « Optimizing PCM Integrated Wall and Roof for Energy Saving in Building under Various Climatic Conditions of Mediterranean Region » (2023), a été cité 64 fois. 12 de ces publications datent des trois dernières années d’activité. Ses travaux sont cosignés avec au moins 12 chercheurs, notamment dans des établissements de France, Portugal.
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Créer mon profil gratuit Ajouter mes publicationsDomaines de recherche
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- ZnO doping and properties
- Ferroelectric and Piezoelectric Materials
- Dielectric properties of ceramics
Publications (23)
- Synthesis of Nb-Doped TiO2 Nanoparticles for Photocatalytic Degradation of Ciprofloxacin: A Combined Experimental and DFT Approach
- Experimental and theoretical perspective on band gap modulation in Sr2+ modified BaTiO3 capacitors
- Review of: "Negative Capacitance Effect at the Interface Between Si Wafers with Undulating Surfaces"
- Effect of Co Doping on the Physical Properties and Organic Pollutant Photodegradation Efficiency of ZnO Nanoparticles for Environmental Applications
- Influence of (Co+Al) co−doping on structural, micro-structural, optical and electrical properties of nanostructured zinc oxide
- Relationship Between Electrode Material, Valence Band Offset, and Nonlinearity in the Resistive Switching Behavior of Au/HfO2/M (M = TiN, W, Pt, or AlCu) Metal–Insulator–Metal Devices: Correlation Between Experimental and DFT Calculations
- DFT investigation on the design and optimization of icosahedral and octahedral beryllium nitride (Be3N2)x fullerene analogue. A comparative study with isosymmetry carbon fullerene
- Physical properties and mechanical stability of AlCu:XO2 (X=Hf, Zr) alloys from density functional theory (DFT): Prediction and analysis for photocatalysis and electronic devices applications
- Computational Modeling of Electronic, Valence Band Offset, and Thermoelectric Transport Properties of SrTiO3/LaCrO3 Heterostructures
- Optimizing PCM Integrated Wall and Roof for Energy Saving in Building under Various Climatic Conditions of Mediterranean Region
- Correlations between structural, dielectric properties, and ab initio calculations in Co-doped ZnO nanoparticles: effect of Co concentration
- Dielectric response of high- κ hafnium oxide under finite electric field: nonlinearities from ab initio and experimental points of view
- Theoretical and experimental investigation of the electronic, optical, electric, and elastic properties of Zn-doped anatase TiO2 for photocatalytic applications
- High-performance screen-printed Au/Ba0.85Sr0.15TiO3/Pt capacitors for tunable devices
- Understanding the physical origin of negative capacitance (NC) in High-k oxides: Experimental and ab-initio approach
- Correlations between first-principles calculations and electric properties of HfO2:Al2O3 alloys for metal–insulator–metal (MIM) capacitor applications
- AC and DC bias effect on capacitance–voltage nonlinearities in Au/HfO2/M (M = Pt, TiN, W, and AlCu) MIM capacitors: effect of the bottom electrode material
- Dielectric relaxations in Ba0.85Sr0.15TiO3 thin films deposited on Pt/Ti/SiO2/Si substrates by sol–gel method
- Reliability of HfO 2 metal–insulator–metal capacitors under AC stress
- Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices
- Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction
- Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance–voltage measurements
- Change in Admittance of HfO2 Metal-Insulator-Metal (MIM) Capacitors after dc Bias Stress
Revues de publication
- Applied Physics A × 3
- Nanomaterials × 2
- Ceramics International × 2
- Journal of Electronic Materials × 2
- Journal of Applied Physics × 2
- Journal of Materials Science Materials in Electronics × 2
Publications par année
- 20253
- 20246
- 20233
- 20213
- 20202
- 20162
- 20143
- 20131
Collaborations
Établissements partenaires : University of Gafsa · University of Sfax · Faculty of Sciences of Sfax · Laboratoire des Technologies de la Microélectronique · Centre National de la Recherche Scientifique
Pays des co-auteurs : France · Portugal
Co-auteurs
- F. Jomni
- T. Larbi
- Zohra Benzarti
- Rached Ben Younès
- B. Yangui
- Hanen Ferhi
- Mabrouk Zemzemi
- Y. Zidi
- Ania Selmi
- M. Kassmi
- Hajer Saadi
- A. Majouri
Données bibliographiques issues d’OpenAlex (base ouverte).
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