Accueil › Annuaire des chercheurs › A. Talbi

A. Talbi

Affiliation : Université Djilali de Sidi Bel Abbès

• 15Publications (affiliation algérienne)
• 17Publications au total
• 122Citations
• 5Indice h

ORCIDOpenAlex

Domaines de recherche

• Semiconductor materials and interfaces
• Semiconductor materials and devices
• GaN-based semiconductor devices and materials
• Silicon Carbide Semiconductor Technologies
• Silicon and Solar Cell Technologies

Publications (15)

• Interface states effect on conduction mechanisms and barrier height homogeneities of Au/n-GaAs Schottky structures in a wide temperature range
  2026 · Revista Mexicana de Física · cité 1 fois
• C-V and G-V Characteristics of Nitridated GaAs (100) Structures as Function of Frequency-Effect of Series Resistance
  2025 · The Eurasia Proceedings of Science Technology Engineering and Mathematics
• Study of the Effect of InP (100) Nitridation Time by XPS Analysis and Electrical Characterisation
  2025 · The Eurasia Proceedings of Science Technology Engineering and Mathematics
• Electrical Study of Au/GaN/GaAs (100) Structures as a Function of Frequency
  2022 · Journal of Nano- and Electronic Physics · cité 3 fois
• Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode
  2021 · Journal of Nano- and Electronic Physics · cité 5 fois
• Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT
  2021 · Micromachines · cité 3 fois
• Optimization of the Electrical Characteristics of the Au/n-type InN/InP Schottky Diode Based on the Contact Technique of Different Diameters
  2020 · Journal of Nano- and Electronic Physics · cité 1 fois
• Numerical Study of the Impact of Junction Depth and the Surface Recombination Velocity on Electrical Parameters of GaAs-Solar Cell
  2019 · International Journal of Advanced Science and Engineering · cité 4 fois
• Analysis of C-V Characteristics of InP(p)/InSb/Al2O3/Au MIS Structures in Wide Temperature Range
  2013 · Advanced materials research
• Nitridation of InP(100) substrates studied by XPS spectroscopy and electrical analysis
  2006 · Materials Science and Engineering A · cité 14 fois
• Electrical transport characteristics of Au/n-GaN Schottky diodes
  2005 · Materials Science and Engineering C · cité 18 fois
• Electrical characterization of Au/n-GaN Schottky diodes
  2004 · Materials Chemistry and Physics · cité 44 fois
• Study and improvement of interfacial properties in a MIS structure based on p-type InP
  2003 · Vacuum · cité 10 fois
• Electrical parameters evolution of Au/InP(100) and Au/InSb/InP(100) systems with restructuring conditions
  2002 · Materials Science and Engineering C · cité 16 fois
• Effect of InSb buffer layer in MIS structures based on InP
  2001 · Vacuum · cité 3 fois

Revues de publication

• Journal of Nano- and Electronic Physics × 3
• The Eurasia Proceedings of Science Technology Engineering and Mathematics × 2
• Materials Science and Engineering C × 2
• Vacuum × 2
• Revista Mexicana de Física × 1
• Micromachines × 1

Publications par année

• 20261
• 20252
• 20221
• 20212
• 20201
• 20191
• 20131
• 20061
• 20051
• 20041

Collaborations

Établissements partenaires : Université Mustapha Stambouli de Mascara · Centre de Développement des Technologies Avancées · École Supérieure en Sciences Appliquées de Tlemcen · École Nationale Polytechnique d'Oran · University of Abou Bekr Belkaïd

Co-auteurs

• Z. Benamara
• Boudali Akkal
• Mekki Abdelkader Benamara
• Abdelkrim Khediri
• Mohammed Berka
• Schahrazade Tizi
• Abdelkader Baghdad Bey
• Fatima Yasmine Maroua BENAMARA
• Benamara Fatima Yasmine Maroua
• Chami Nadir
• Toumi Hayet
• Hayat Toumi

Données bibliographiques issues d’OpenAlex (base ouverte).