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M. Gendry

Affiliation : Centre National de la Recherche Scientifique · Institut des Nanotechnologies de Lyon · Institut National des Sciences Appliquées de Lyon

• 33Publications (affiliation française)
• 389Publications au total
• 3759Citations
• 31Indice h

ORCIDOpenAlex

Domaines de recherche

• Semiconductor Quantum Structures and Devices
• Nanowire Synthesis and Applications
• Semiconductor materials and interfaces
• solar cell performance optimization
• Quantum Dots Synthesis And Properties

Publications (33)

• Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate
  2020 · Journal of Luminescence · cité 4 fois
• Thermal transfer and interaction mechanisms of localized excitons in families of InAs quantum dashes grown on InP(001) vicinal substrate emitting near 1.55 μm wavelength
  2016 · International Journal of Modern Physics B
• Erratum: “Thermal transfer and interaction mechanisms of localized excitons in families of InAs quantum dashes grown on InP(001) vicinal substrate emitting near 1.55 μm wavelength”
  2016 · International Journal of Modern Physics B
• Thermal transfer and interaction mechanisms of localized excitons in families of InAs quantum dashes grown on InP(001) vicinal substrate emitting near 1.55 µm wavelength
  2016 · HAL
• Distribution of barrier heights in metal/n-InAlAs Schottky diodes from current–voltage–temperature measurements
  2014 · Materials Science in Semiconductor Processing · cité 45 fois
• Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate
  2014 · Applied Physics Letters · cité 9 fois
• Photoluminescence polarization and piezoelectric properties of InAs/InP quantum rod-nanowires
  2014 · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
• Polarization properties of single and ensembles of InAs/InP quantum rod nanowires emitting in the telecom wavelengths
  2013 · Journal of Applied Physics · cité 11 fois
• Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution
  2013 · Journal of Luminescence · cité 7 fois
• Optical investigation of InAs quantum dashes grown on InP(001) vicinal substrate
  2013 · Superlattices and Microstructures · cité 5 fois
• Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates
  2013 · physica status solidi (RRL) - Rapid Research Letters · cité 1 fois
• Excitonic properties of wurtzite InP nanowires grown on silicon substrate
  2012 · Nanotechnology · cité 31 fois
• Growth temperature dependence of exciton lifetime in wurtzite InP nanowires grown on silicon substrates
  2012 · Applied Physics Letters · cité 29 fois
• InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates
  2012 · Journal of Crystal Growth · cité 24 fois
• Impact of substrate-induced strain and surface effects on the optical properties of InP nanowires
  2012 · Applied Physics Letters · cité 14 fois
• GROWTH OF In2O3 ON In METAL AND ON InSb BY THE ELECTRON IRRADIATION
  2012 · Surface Review and Letters · cité 4 fois
• Coulomb charging effect of electrons in InAs/InAlAs quantum dots studied by capacitance techniques
  2011 · Physica B Condensed Matter · cité 5 fois
• Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing
  2011 · Journal of Nanoscience and Nanotechnology · cité 5 fois
• Tunnelling current in Schottky diodes containing InAs quantum dots
  2011 · Superlattices and Microstructures · cité 2 fois
• Optical properties of wurtzite InAs/InP core-shell nanowires grown on silicon substrates
  2011 · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · cité 1 fois
• Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes
  2010 · HAL · cité 5 fois
• Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
  2010 · Semiconductor Science and Technology · cité 3 fois
• Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes
  2010 · Journal of Applied Physics
• Optical and structural properties of INP nanowires grown on silicon substrate
  2010 · IEEE Photonics Society Annual Meeting
• Capacitance–voltage analysis of InAs quantum dots grown on InAlAs/InP(0 0 1)
  2008 · Microelectronics Journal · cité 6 fois
• Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
  2007 · Physica B Condensed Matter · cité 2 fois
• Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(0 0 1)
  2006 · Semiconductor Science and Technology · cité 5 fois
• Effective generation lifetime depth profile in InAs quantum dots grown on InAlAs/InP(0 0 1)
  2005 · Semiconductor Science and Technology · cité 7 fois
• Arsenic pressure and spacer layer thickness effects on the optical properties of stacked InAs/InAlAs quantum dot array
  2005 · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · cité 2 fois
• Capacitance–voltage profile characteristics of Schottky barrier structure with InAs quantum dots grown on InAlAs/InP(001)
  2005 · Materials Science and Engineering C · cité 1 fois
• Optical properties of self-organized InAs nanostructures grown on InAlAs/InP(001)
  2003 · Physica E Low-dimensional Systems and Nanostructures · cité 7 fois
• Effect of spacer layer thickness on the optical properties of stacked InAs/InAlAs quantum wires grown on InP (001)
  2003 · Materials Science and Engineering B · cité 6 fois
• Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
  2001 · Applied Physics Letters · cité 44 fois

Revues de publication

• Applied Physics Letters × 4
• Semiconductor Science and Technology × 3
• Journal of Luminescence × 2
• International Journal of Modern Physics B × 2
• HAL × 2
• Conference proceedings. ... International Conference on Indium Phosphide and Related Materials × 2

Publications par année

• 20201
• 20163
• 20143
• 20134
• 20125
• 20114
• 20104
• 20081
• 20071
• 20061

Collaborations

Établissements partenaires : Université de Lyon · École Centrale de Lyon · University of Monastir · Lyon 1 Université · Laboratoire des Technologies de la Microélectronique

Pays des co-auteurs : Tunisie · Canada · Portugal

Co-auteurs

• Bassem Salem
• Nicolas Chauvin
• Catherine Bru‐Chevallier
• Gilles Patriarche
• K. Naji
• Georges E. Bremond
• Mohamed Helmi Hadj Alouane
• Roman Anufriev
• Hammadi Khmissi
• J. Brault
• Olivier Marty
• Artur Turala

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