Accueil › Annuaire des chercheurs › A. Rebey
A. Rebey
Affiliation : Qassim University · University of Monastir
- 120Publications (affiliation tunisienne)
- 139Publications au total
- 1420Citations
- 18Indice h
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- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- solar cell performance optimization
- GaN-based semiconductor devices and materials
- Advanced Semiconductor Detectors and Materials
Publications (120)
- THz intersubband transitions in n-type δ-doped GaNAsBi/GaAs multi-quantum well structures
- Comment on “Effective mass of heavy, light, and spin split-off band electron and hole g-factor in cubic perovskite materials” [J. Appl. Phys. 128, 235109 (2020)]
- Bohr radius and diamagnetic coefficients of confined charge carriers in strained spherical GaNAsBi-based quantum dots
- Structural and optical properties of diluted GaAsBi alloys grown on GaAs(115) substrate by MOVPE
- Theoretical Study of Self-Assembled Bi Nanolines on the InAs(001) Surface
- How the Structural, Electronic and Optical Properties of New Dilute Bismide AlP1–xBix Alloys Change with Bi Composition: Ab-Initio Investigation
- MOVPE growth and characterization of GaAs/GaAsBi/GaAs p-i-n structure
- Magnetothermal properties of two-dimensional electron gas in matched AlGaAs/GaABiN structure
- New crystalline Cu1-x+yBixFeyO Semiconductors via Facile Synthesis: high tuning of Optical, Dielectric, Electrical, magnetic, and sunlight-driven Depollution Properties
- Theoretical study of adsorption of Bi on cation-rich InAs/(0 0 1) and InP(0 0 1))- ζ (4 × 2) reconstructed surfaces
- Influence of annealing on the thermal quenching of photoluminescence in GaAsBi/GaAs quantum dots with bimodal inhomogeneous broadening
- Exploring the structural and electronic properties of self-assembled bismuth nanolines on InAs (001) surface through first-principles calculations
- Structural, Electronic and Optical Properties of the Ordered InP1 – xBix: An Ab-Initio Study
- Thermal annealing effects on the physical properties of GaAsBi/GaAs/GaAs:Si structure
- Influence of Bi and N contents and dot radius on optoelectronic and diamagnetic properties of GaNAsBi strained quantum dot excitons
- Review of: "The number of free electrons per atom in a metallic conductor"
- The band structure calculation of tensile strained GaNAsBi/GaAs quantum well heterostructure
- Thermal processes contributions to the temperature dependence of the energy gap in dilute bismuth III-V alloys
- In situ spectral reflectance analysis of the early stages of GaN thermal decomposition
- Effects of the diameter of thermally generated nanopits on carrier dynamics in AlGaN/GaN heterostructures
- Density functional theory study of quaternary InPBiN alloys lattice matched to InP substrate: Structural, electronic and optical properties
- Influence of the Substrate Material on the Structure and Morphological Properties of Bi Films
- Effect of thermally generated nanopits diameter on the carrier dynamics in AlGaN/GaN heterostructures
- GaAs-based strain-balanced GaNxAs1-x-yBiy type-I and -II multi-quantum wells for near-infrared photodetection range
- Study of Surface Stability and Electronic Structure of a Bi-terminated InAs (001) Surface Based on Ab Initio Calculations
- Optical characterization by photoreflectance of GaN after its partial thermal decomposition
- Biaxial strain effects on the band structure and absorption coefficient of GaAs1-x-yNxBiy/GaAs MQWs calculated using k.p method
- Theoretical study of strained GaNAsBi/GaAs quantum structures for application in infrared range
- A Systematic Methodology for the Analysis of Multicomponent Photoreflectance Spectra Applied to GaAsBi/GaAs Structure
- Effect of InAs buffer layer thickness on physical properties of InAsBi heterostructures grown by MOCVD
- Effect of V/III ratio on the optical properties of (3 1 1)A and (3 1 1) B oriented InAlAs/InP heterostructures
- Analysis of in situ thin films epitaxy by reflectance spectroscopy: Effect of growth parameters
- In situ monitoring of InAsBi alloy grown under alternated bismuth flows by metalorganic vapor phase epitaxy
- Adsorption of Bi adatom on InAs (001) – β2 (2 × 4) and α2 (2 × 4) surface: A first principles study
- Electron Mobility Calculation of Diluted III–V-Nitrides Alloys
- First-principles study of atomic and electronic structure of Bi/InP (001)-α 2 (2 × 4) and β 2 (2 × 4) surfaces
- Study of Stark Effect in n-doped 1.55 μm InN0.92yP1−1.92yBiy/InP MQWs
- Time-resolved photoluminescence and photoreflectance spectroscopy of GaN layers grown on SiN-treated sapphire substrate: Optical properties evolution at different growth stages
- Theoretical Predictions of Structural, Electronic, and Optical Properties of Dilute Bismide AlN1−x Bi x in Zinc-Blend Structures
- MOVPE growth of InAsBi/InAs/GaAs heterostructure analyzed by in situ spectral reflectance
- Comprehensive study of the structural, optical and electrical properties of InAlAs: Mg films lattice matched to InP grown by MOVPE
- TEMPERATURE DEPENDENCE ON THE MORPHOLOGICAL EVOLUTION OF DILUTE InAsBi/GaAs NANOSTRUCTURES GROWN BY METALORGANIC VAPOR PHASE EPITAXY
- Investigation of Optical Gain in 1.55 μm p-i-n GaNAsBi-Based DQWs
- Discontinuities and bands alignments of strain-balanced III-V-N/III-V-Bi heterojunctions for mid-infrared photodetectors
- Calculation of InAsBi ternary phase diagram
- Theoretical study of the carrier effective mass in diluted III-N-V semiconductor alloys by using 10-band k.p model
- Optical gain spectra of 1.55 μm GaAs/GaN.58yAs1-1.58yBiy/GaAs single quantum well
- Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55 μm
- The influence of In composition on properties of In x Ga 1-x As/GaAs structures grown by MOVPE and in situ monitored by spectral reflectance
- Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys
- Bismuth catalyzed growth of GaAsBi nanowires by metalorganic vapor phase epitaxy
- Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm
- Ab initio predictions of structure preferences and band gap character in ordered AlAs1−xBix alloys
- Photoluminescence of GaAsBi/GaAs quantum dots grown by metalorganic vapor phase epitaxy
- Theoretical calculations of absorption spectra of GaNAsBi-based MQWs operating at 1.55 μm
- Pressure and composition dependence of structural, electronic and optical properties of GaAsBi alloys
- n doping effect modeling in 1.3 μm GaN0.58As1−1.58Bi /GaAs quantum wells
- Strain study of GaAs/In x Ga 1−x As/GaAs structures grown by MOVPE
- Investigation of the doping and Stark effects on the band structure and optical absorption of 1.55 μm GaNAsBi/GaAs MQWs
- Photoreflectance analysis of annealed vanadium-doped GaAs thin films grown by metalorganic vapor phase epitaxy
- First principles calculations of structure parameters and transition pressures of GaN1 − x Bi x alloys
- Theoretical study of optoelectronic properties of GaAs 1 − x Bi x alloys using valence band anticrossing model
- Self-consistent analysis of the band structure of doped lattice-matched GaNAsBi-based QWs operating at 1.55μm
- Photoreflectance characterization of vanadium-doped GaAs layers grown by metalorganic vapor phase epitaxy
- Thermodynamic study of the ternary system gallium‐arsenic‐bismuth
- Stark effect in GaNAsBi/GaAs quantum wells operating at 1.55 μm
- Analysis of the VIS–NIR spectral reflectance of Bi/GaAs structures grown by MOVPE and UHVE
- Optical properties study of InxGa1−xAs/GaAs structures using spectral reflectance, photoreflectance and near-infrared photoluminescence
- Electronic band structure calculation of GaNAsBi alloys and effective mass study
- Effect of growth temperature and GaAs substrate misorientation on the morphology of InAsBi nanoislands grown by metalorganic vapor phase epitaxy
- Atmospheric-pressure metal–organic vapor-phase epitaxy of GaAsBi alloys on high-index GaAs substrates
- Structural and optical properties of InxGa1−xAs strained layers grown on GaAs substrates by MOVPE
- Optical properties study of In.08Ga.92As/GaAs using spectral reflectance, photoreflectance and near-infrared Photoluminescence
- Oxidation of bismuth nanodroplets deposit on GaAs substrate
- Atmospheric-Pressure Metalorganic Vapor Phase Epitaxy of GaAsBi Alloy on GaAs Substrate
- Ab initio investigation of structural and electronic properties of zinc blende AlN1−xBix alloys
- First principles calculations of structural and electronic properties of GaN 1−x Bi x alloys
- Study of surface roughness using spectral reflectance measurements recorded during the MOVPE of InAs/GaAs heterostructures
- Optical and morphological study of misoriented GaAs substrates exposed to bismuth flow using in situ spectral reflectance and atomic force microscopy
- High resolution X-ray diffraction study of InAs layers grown with and without bismuth flow on GaAs substrates by metalorganic vapor phase epitaxy
- First-principles calculation of the physical properties of GaAs1-xBixalloys
- Growth of GaAsBi alloy under alternated bismuth flows by metalorganic vapor phase epitaxy
- In Situ Spectral Reflectance Investigation of InAs/GaAs Heterostructures Grown by MOVPE
- Photoreflectance and photoluminescence study of annealing effects on GaAsBi layers grown by metalorganic vapor phase epitaxy
- Study of GaAsBi MOVPE growth on (100) GaAs substrate under high Bi flow rate by high resolution X-ray diffraction
- Surfactant effect of bismuth in atmospheric pressure MOVPE growth of InAs layers on (100) GaAs substrates
- Spectroscopic ellipsometry study of GaAs1−xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy
- Heteroepitaxial growth of thin InAs layers on GaAs(100) misoriented substrates: A structural and morphological comparison
- Properties of InAs grown on misoriented GaAs substrates by atmospheric pressure metal–organic vapor phase epitaxy
- Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy
- Effect of thermal annealing on structural and optical properties of the GaAs0.963Bi0.037alloy
- AP-MOVPE of InGaAs on GaAs (0 0 1): Analysis of in situ reflectivity response
- Temperature effect study on structural and morphological properties of In.08Ga.92As/GaAs structures grown by MOVPE
- AP-MOVPE of thin GaAs1−xBix alloys
- Surface analysis of different oriented GaAs substrates annealed under bismuth flow
- Stress and density of defects in Si‐doped GaN
- Laser reflectometry in situ monitoring of InGaAs grown by atmospheric pressure metalorganic vapour phase epitaxy
- Effects of thermal annealing onn-type GaAs:V grown by MOCVD
- In depth study of the compensation in annealed heavily carbon doped GaAs
- Statistical analysis of vanadium in gallium arsenide
Co-auteurs
- Belgacem El Jani
- M.M. Habchi
- Hédi Fitouri
- C. Bilel
- A. Bchetnia
- Zied Chine
- Mourad Mbarki
- I. Zaied
- R. Boussaha
- T. Boufaden
- Ramzi Alaya
- K. Chakir
Données bibliographiques issues d’OpenAlex (base ouverte).
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