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Y. Amhouche

Affiliation : Chouaib Doukkali University

8Publications (affiliation in Morocco)
10Total publications
11Citations
2h-index

Research profile

Y. Amhouche has 8 indexed publications (2001–2005). Their work appears mainly in “Active and Passive Electronic Components”, “International Conference on Microelectronics (ICM)” and “Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena”. Their most cited article, “Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors” (2001), has been cited 7 times. Their work is co-authored with at least 2 researchers.

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Research areas

Semiconductor materials and devices
Advancements in Semiconductor Devices and Circuit Design
Low-power high-performance VLSI design
Integrated Circuits and Semiconductor Failure Analysis
Silicon Carbide Semiconductor Technologies

Publications (8)

Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs
2005 · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors
2001 · Active and Passive Electronic Components · cited 7 times
An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices
2001 · Active and Passive Electronic Components · cited 2 times
An accurate method for extracting the critical field in short channel NMOS devices
2001 · International Conference on Microelectronics (ICM) · cited 1 times
New method for determination of drain saturation voltage in submicrometer MOSFETs between liquid helium to room temperature
2001 · International Conference on Microelectronics (ICM) · cited 1 times
Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep SubmicrometerMOSFET′S
2001 · Active and Passive Electronic Components
A Physical Model for MOSFET Drain Current in Non‐ohmic Regime Using Ohmic Regime Operation
2001 · Active and Passive Electronic Components
New Method for Determination of Drain Saturation Voltage in Short Channel MOS DevicesBetween Liquid Helium to Room Temperature
2001 · Active and Passive Electronic Components

Publication venues

Active and Passive Electronic Components × 5
International Conference on Microelectronics (ICM) × 2
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena × 1

Publications per year

20051
20017

Co-authors

Bibliographic data from OpenAlex (open database).