Accueil › Annuaire des chercheurs › Y. Amhouche

Y. Amhouche

Affiliation : Chouaib Doukkali University

• 8Publications (affiliation marocaine)
• 10Publications au total
• 11Citations
• 2Indice h

OpenAlex

Domaines de recherche

• Semiconductor materials and devices
• Advancements in Semiconductor Devices and Circuit Design
• Low-power high-performance VLSI design
• Integrated Circuits and Semiconductor Failure Analysis
• Silicon Carbide Semiconductor Technologies

Publications (8)

• Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs
  2005 · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
• Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors
  2001 · Active and Passive Electronic Components · cité 7 fois
• An Accurate Method for Extracting the Critical Field in Short Channel NMOS Devices
  2001 · Active and Passive Electronic Components · cité 2 fois
• An accurate method for extracting the critical field in short channel NMOS devices
  2001 · International Conference on Microelectronics (ICM) · cité 1 fois
• New method for determination of drain saturation voltage in submicrometer MOSFETs between liquid helium to room temperature
  2001 · International Conference on Microelectronics (ICM) · cité 1 fois
• Analysis of Temperature and Drain Voltage Dependence of Substrate Current in Deep SubmicrometerMOSFET′S
  2001 · Active and Passive Electronic Components
• A Physical Model for MOSFET Drain Current in Non‐ohmic Regime Using Ohmic Regime Operation
  2001 · Active and Passive Electronic Components
• New Method for Determination of Drain Saturation Voltage in Short Channel MOS DevicesBetween Liquid Helium to Room Temperature
  2001 · Active and Passive Electronic Components

Co-auteurs

• Khalid Rais
• Redouane Rmaily

Données bibliographiques issues d’OpenAlex (base ouverte).