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Youcef Kribes

الانتماء : Centre de Développement des Technologies Avancées

• 4منشورات (انتماء جزائري)
• 7مجموع المنشورات
• 84الاستشهادات
• 5مؤشر h

OpenAlex

مجالات البحث

• Semiconductor materials and devices
• Semiconductor materials and interfaces
• Integrated Circuits and Semiconductor Failure Analysis
• GaN-based semiconductor devices and materials
• Silicon Carbide Semiconductor Technologies

المنشورات (4)

• On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices
  2015 · Solid-State Electronics · استُشهد به 13 مرة
• A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors
  2012 · Japanese Journal of Applied Physics · استُشهد به 9 مرة
• Geometric Component in Constant-Amplitude Charge-Pumping Characteristics of LOCOS- and LDD-MOSFET Devices
  2010 · IEEE Transactions on Device and Materials Reliability · استُشهد به 8 مرة
• A new method of oxide charges densities determination using charge-pumping technique in MOS structures
  2008 · International Conference on Microelectronics

مجلات النشر

• Solid-State Electronics × 1
• Japanese Journal of Applied Physics × 1
• IEEE Transactions on Device and Materials Reliability × 1
• International Conference on Microelectronics × 1

المنشورات حسب السنة

• 20151
• 20121
• 20101
• 20081

التعاون العلمي

المؤسسات الشريكة : University of Boumerdes

المؤلفون المشاركون

• Boualem Djezzar
• Hakim Tahi
• Abdelmadjid Benabdelmoumene
• Amel Chenouf
• Hamid Bentarzi
• Abdelkader Zitouni
• Mohamed Goudjil

البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).