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Youcef Kribes
Affiliation : Centre de Développement des Technologies Avancées
- 4Publications (affiliation in Algeria)
- 7Total publications
- 84Citations
- 5h-index
Research profile
Youcef Kribes has 4 indexed publications (2008–2015). Their work appears mainly in “Solid-State Electronics”, “Japanese Journal of Applied Physics” and “IEEE Transactions on Device and Materials Reliability”. Their most cited article, “On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices” (2015), has been cited 13 times. Their work is co-authored with at least 7 researchers.
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Create my free profile Add my publicationsResearch areas
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
Publications (4)
- On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices
- A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors
- Geometric Component in Constant-Amplitude Charge-Pumping Characteristics of LOCOS- and LDD-MOSFET Devices
- A new method of oxide charges densities determination using charge-pumping technique in MOS structures
Publication venues
- Solid-State Electronics × 1
- Japanese Journal of Applied Physics × 1
- IEEE Transactions on Device and Materials Reliability × 1
- International Conference on Microelectronics × 1
Publications per year
- 20151
- 20121
- 20101
- 20081
Collaborations
Partner institutions : University of Boumerdes
Co-authors
- Boualem Djezzar
- Hakim Tahi
- Abdelmadjid Benabdelmoumene
- Amel Chenouf
- Hamid Bentarzi
- Abdelkader Zitouni
- Mohamed Goudjil
Bibliographic data from OpenAlex (open database).
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