الرئيسية › دليل الباحثين › A. Claverie

A. Claverie

الانتماء : Centre National de la Recherche Scientifique · Centre d’Élaboration de Matériaux et d’Études Structurales

• 11منشورات (انتماء فرنسي)
• 461مجموع المنشورات
• 7835الاستشهادات
• 46مؤشر h

ORCIDOpenAlex

مجالات البحث

• Semiconductor materials and devices
• Semiconductor materials and interfaces
• Ion-surface interactions and analysis
• Silicon and Solar Cell Technologies
• Advancements in Semiconductor Devices and Circuit Design

المنشورات (11)

• Thermal evolution of H-related defects in H implanted Si: from nano-platelets to micro-cracks
  2018 · International Conference on Ion Implantation Technology · استُشهد به 3 مرة
• Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon
  2016 · Journal of Applied Physics · استُشهد به 52 مرة
• Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy
  2015 · Journal of Applied Physics · استُشهد به 44 مرة
• Influence of the Germanium content on the amorphization of silicon–germanium alloys during ion implantation
  2013 · Materials Science in Semiconductor Processing · استُشهد به 7 مرة
• The effect of Ge content on the formation and evolution of {113} defects in SiGe alloys
  2013 · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · استُشهد به 1 مرة
• Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer
  2010 · Applied Physics Letters · استُشهد به 15 مرة
• Variation of end of range defects density with ion beam energy and dose: Experiments and simulations
  2005 · Journal de Physique IV (Proceedings)
• A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si
  2000 · Applied Physics Letters · استُشهد به 135 مرة
• The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon
  1997 · Applied Physics Letters · استُشهد به 33 مرة
• The effect of boron doping on the thermal behaviour of EOR defects in Silicon
  1996 · Ion Beam Modification of Materials
• Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers
  1995 · MRS Proceedings · استُشهد به 25 مرة

مجلات النشر

• Applied Physics Letters × 3
• Journal of Applied Physics × 2
• International Conference on Ion Implantation Technology × 1
• Materials Science in Semiconductor Processing × 1
• Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics × 1
• Journal de Physique IV (Proceedings) × 1

المنشورات حسب السنة

• 20181
• 20161
• 20151
• 20132
• 20101
• 20051
• 20001
• 19971
• 19961
• 19951

التعاون العلمي

المؤسسات الشريكة : Université de Toulouse · Laboratoire d'Analyse et d'Architecture des Systèmes · Motorola (France) · Commissariat à l'Énergie Atomique et aux Énergies Alternatives · CEA Grenoble

بلدان المؤلفين المشاركين : تونس · الجزائر

المؤلفون المشاركون

• Nikolay A. Cherkashin
• Fuccio Cristiano
• Caroline Bonafos
• A. Martínez
• Daniel Alquier
• Nabil Daghbouj
• D. Mathiot
• F.-X. Darras
• Christian Bergaud
• G. Benassayag
• Benjamin P Colombeau
• André Peyre-Lavigne

البيانات البيبليوغرافية مصدرها OpenAlex (قاعدة مفتوحة).