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A. Claverie

Affiliation : Centre National de la Recherche Scientifique · Centre d’Élaboration de Matériaux et d’Études Structurales

• 11Publications (affiliation française)
• 461Publications au total
• 7835Citations
• 46Indice h

ORCIDOpenAlex

Domaines de recherche

• Semiconductor materials and devices
• Semiconductor materials and interfaces
• Ion-surface interactions and analysis
• Silicon and Solar Cell Technologies
• Advancements in Semiconductor Devices and Circuit Design

Publications (11)

• Thermal evolution of H-related defects in H implanted Si: from nano-platelets to micro-cracks
  2018 · International Conference on Ion Implantation Technology · cité 3 fois
• Effect of the order of He+ and H+ ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon
  2016 · Journal of Applied Physics · cité 52 fois
• Cracks and blisters formed close to a silicon wafer surface by He-H co-implantation at low energy
  2015 · Journal of Applied Physics · cité 44 fois
• Influence of the Germanium content on the amorphization of silicon–germanium alloys during ion implantation
  2013 · Materials Science in Semiconductor Processing · cité 7 fois
• The effect of Ge content on the formation and evolution of {113} defects in SiGe alloys
  2013 · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · cité 1 fois
• Controlled drive-in and precipitation of hydrogen during plasma hydrogenation of silicon using a thin compressively strained SiGe layer
  2010 · Applied Physics Letters · cité 15 fois
• Variation of end of range defects density with ion beam energy and dose: Experiments and simulations
  2005 · Journal de Physique IV (Proceedings)
• A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si
  2000 · Applied Physics Letters · cité 135 fois
• The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon
  1997 · Applied Physics Letters · cité 33 fois
• The effect of boron doping on the thermal behaviour of EOR defects in Silicon
  1996 · Ion Beam Modification of Materials
• Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers
  1995 · MRS Proceedings · cité 25 fois

Revues de publication

• Applied Physics Letters × 3
• Journal of Applied Physics × 2
• International Conference on Ion Implantation Technology × 1
• Materials Science in Semiconductor Processing × 1
• Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics × 1
• Journal de Physique IV (Proceedings) × 1

Publications par année

• 20181
• 20161
• 20151
• 20132
• 20101
• 20051
• 20001
• 19971
• 19961
• 19951

Collaborations

Établissements partenaires : Université de Toulouse · Laboratoire d'Analyse et d'Architecture des Systèmes · Motorola (France) · Commissariat à l'Énergie Atomique et aux Énergies Alternatives · CEA Grenoble

Pays des co-auteurs : Tunisie · Algérie

Co-auteurs

• Nikolay A. Cherkashin
• Fuccio Cristiano
• Caroline Bonafos
• A. Martínez
• Daniel Alquier
• Nabil Daghbouj
• D. Mathiot
• F.-X. Darras
• Christian Bergaud
• G. Benassayag
• Benjamin P Colombeau
• André Peyre-Lavigne

Données bibliographiques issues d’OpenAlex (base ouverte).