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Riad Remmouche
Affiliation : University of Jijel
- 16Publications (affiliation in Algeria)
- 18Total publications
- 54Citations
- 5h-index
Research profile
Riad Remmouche has 16 indexed publications (1998–2026). Their work appears mainly in “Acta Physica Polonica A”, “Materials Science” and “Silicon”. Their most cited article, “Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films” (2013), has been cited 11 times. 3 of these publications date from the last three years of activity. Their work is co-authored with at least 12 researchers.
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Create my free profile Add my publicationsResearch areas
- Silicon Nanostructures and Photoluminescence
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Graphene research and applications
Publications (16)
- Study of Structural, Electrical and Optical Characteristics of Boron Implanted Silicon Nanocrystals Embedded in SiNx Matrix
- Predictive Control of Surface Roughness as a Function of Temperature in a SiNx Thin Film Deposition Process Using the Kinetic Monte Carlo Method
- Investigation of Electrical Behavior in Back Gated Graphene FET
- Evolution of the Raman spectra features of defective monolayer graphene in back-gate configuration: Experimental study
- Modeling and Control of SiNx Film Growth using the Kinetic Monte Carlo Method: Impact of Gas Flow Rate on Surface Roughness and Film Thickness
- Electrical Characteristics of Single Layer Graphene Ribbons in a Wide Temperature Range
- CORRELATION BETWEEN ELECTRICAL AND OPTICAL PROPERTIES OF DOPED SILICON NANOCRYSTALS
- Modelling the Quantum Capacitance of Single-layer and Bilayer Graphene
- Experimental study of n-type porous silicon obtained under illumination
- Analytical Threshold Voltage Model Considering Quantum Size Effects for Nanocrystalline Silicon Thin Film Transistors
- Theoretical determination of the impact of channel morphology and quantum size effects on the surface potential of nanocrystalline silicon thin film transistors
- Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films
- Study of Silicon Nanocrystals Formation in Annealed Amorphous In Situ Nitrogen Doped Silicon Thin Films Obtained by Low Pressure Chemical Vapor Deposition
- Passivity-based control of the new hyperchaotic system
- Compact Modeling for Submicron Fully Depleted SOI MOSFET's
- A static model for the SOI TMOS in strong inversion
Publication venues
- Acta Physica Polonica A × 4
- Materials Science × 3
- Silicon × 2
- Materials Science in Semiconductor Processing × 2
- Diamond and Related Materials × 1
- Materiali in tehnologije × 1
Publications per year
- 20261
- 20252
- 20235
- 20181
- 20171
- 20141
- 20131
- 20123
- 19981
Collaborations
Partner institutions : Centre de Développement des Technologies Avancées · University Frères Mentouri Constantine 1 · University Ferhat Abbas of Setif
Co-authors
- Hachemi Bouridah
- Mahmoud Riad Beghoul
- Rachid Fates
- Hakim Haoues
- Toufik BENKEDIDAH
- Adil Bouhadiche
- Farida Mansour
- Soulef Benghorieb
- Noureddine Boutaoui
- Yousra AMMOUR
- Nidal Beltas
- S. Benzeghda
Bibliographic data from OpenAlex (open database).
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