E. Morvan

Affiliation : Thales (France)

1Publications (affiliation in France)
159Total publications
3452Citations
24h-index

Research profile

E. Morvan has 1 indexed publication (2005). Their work appears in “Solid-State Electronics”. Their most cited article, “Conductance deep-level transient spectroscopy study of 1μm gate length 4H-SiC MESFETs” (2005), has been cited 9 times. Their work is co-authored with at least 5 researchers, including institutions in Tunisia.

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Research areas

Silicon Carbide Semiconductor Technologies
GaN-based semiconductor devices and materials
Advanced Power Amplifier Design
Semiconductor materials and interfaces
Semiconductor materials and devices

Publications (1)

Conductance deep-level transient spectroscopy study of 1μm gate length 4H-SiC MESFETs
2005 · Solid-State Electronics · cited 9 times

Collaborations

Partner institutions : Centre National de la Recherche Scientifique · Institut National des Sciences Appliquées de Lyon · University of Monastir

Co-authors’ countries : Tunisia

Co-authors

Bibliographic data from OpenAlex (open database).