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Georges E. Bremond
Affiliation : Centre National de la Recherche Scientifique · Institut des Nanotechnologies de Lyon · Institut National des Sciences Appliquées de Lyon
- 30Publications (affiliation in France)
- 311Total publications
- 2971Citations
- 28h-index
Research profile
Georges E. Bremond has 30 indexed publications (1992–2023). Their work appears mainly in “Semiconductor Science and Technology”, “Materials Science and Engineering C” and “Physica B Condensed Matter”. Their most cited article, “Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates” (2001), has been cited 44 times. Their work is co-authored with at least 12 researchers, including institutions in Tunisia, Portugal, Canada.
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Create my free profile Add my publicationsResearch areas
- Semiconductor materials and interfaces
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Silicon Nanostructures and Photoluminescence
- Silicon and Solar Cell Technologies
Publications (30)
- Optimization of the performance of micromorph tandem solar cell a-Si/uc-Si
- Optimization of the performance of micromorph tandem solar cell a-Si/μc-Si
- Electrical properties of self-assembled InAs/InAlAs quantum dots on InP
- Morphology and optical properties of p-type porous GaAs(100) layers made by electrochemical etching
- Capacitance–voltage analysis of InAs quantum dots grown on InAlAs/InP(0 0 1)
- Study of porous III–V semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL): Effect of ionic bombardment and nitridation process
- Deep level transient spectroscopy studies at low temperature of In0.52Al0.48As epilayers
- Toward long wavelength low density InAs/GaAs quantum dots
- Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(0 0 1)
- Optimizing the spacer layer thickness of vertically stacked InAs/GaAs quantum dots
- Thermal annealing effects on photoluminescence properties of vertically stacked InAs/GaAs quantum dots with optimized spacer layer thickness
- Tuning optical properties of high In content InGaAs/GaAs capped InAs quantum dots by post growth rapid thermal annealing
- Effective generation lifetime depth profile in InAs quantum dots grown on InAlAs/InP(0 0 1)
- Evidence of lateral coupling in long wavelength vertically stacked InAs/GaAs(001) quantum dots
- Arsenic pressure and spacer layer thickness effects on the optical properties of stacked InAs/InAlAs quantum dot array
- Capacitance–voltage profile characteristics of Schottky barrier structure with InAs quantum dots grown on InAlAs/InP(001)
- Long wavelength vertically stacked InAs/GaAs(001) quantum dots with a bimodal size distribution: Optical properties and electronic coupling
- Spacer layer thickness effects on the photoluminescence properties of InAs/GaAs quantum dot superlattices
- Optical properties of self-organized InAs nanostructures grown on InAlAs/InP(001)
- Effect of spacer layer thickness on the optical properties of stacked InAs/InAlAs quantum wires grown on InP (001)
- Electron traps in metalorganic chemical vapor deposition grown Al0.2Ga0.8As
- Electrical field effect on the optical threshold energy of donor and acceptor levels in chromium-doped GaP
- Electrical field effect on both thermal ionization energy and optical threshold energy of the Cr3+/4+ deep donor level in GaP
- Numerical simulation of photorefractive gain in CdTe:V with optimum frequency of the electric field
- Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
- Self-organized growth, ripening, and optical properties of uncapped InP/GaP (100) islands
- Optical spectroscopy of titanium-doped CdZnTe
- Poole–Frenkel effect assisted emission from deep donor level in chromium doped GaP
- Role of zinc in the optical properties of vanadium-doped CdZnTe
- Stoichiometry-dependent native acceptor and donor levels in Ga-rich-n-type gallium arsenide
Publication venues
- Semiconductor Science and Technology × 5
- Materials Science and Engineering C × 4
- Physica B Condensed Matter × 3
- Microelectronics Journal × 2
- Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics × 2
- Applied Physics Letters × 2
Publications per year
- 20231
- 20102
- 20082
- 20072
- 20062
- 20057
- 20041
- 20035
- 20022
- 20011
Collaborations
Partner institutions : École Centrale de Lyon · Institut Pascal · Université Blaise Pascal · Institut National des Sciences Appliquées de Toulouse · Lyon 1 Université
Co-authors’ countries : Tunisia · Portugal · Canada
Co-authors
- Bassem Salem
- M. Gendry
- Olivier Marty
- G. Guillot
- J. Brault
- A. Zerrai
- Robert Triboulet
- B. Gruzza
- M. Lemiti
- Christine Robert‐Goumet
- Sana Ben Khalifa
- Mathieu Sénès
Bibliographic data from OpenAlex (open database).
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