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B. Gruzza
Affiliation : Centre National de la Recherche Scientifique · Institut Pascal · Université Clermont Auvergne
- 42Publications (affiliation in France)
- 154Total publications
- 1791Citations
- 22h-index
Research profile
B. Gruzza has 42 indexed publications (1993–2019). Their work appears mainly in “Vacuum”, “Materials Chemistry and Physics” and “Applied Surface Science”. Their most cited article, “Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency” (2000), has been cited 133 times. 2 of these publications date from the last three years of activity. Their work is co-authored with at least 12 researchers, including institutions in Algeria, Tunisia.
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Create my free profile Add my publicationsResearch areas
- Semiconductor materials and interfaces
- Electron and X-Ray Spectroscopy Techniques
- Ion-surface interactions and analysis
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
Publications (42)
- The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE
- Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
- Synthesis and Study of Stable and Size-Controlled ZnO–SiO2 Quantum Dots: Application as a Humidity Sensor
- Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method
- Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode
- Effects of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs
- Electrical behaviour and analytical modelling of I-V and C-V characteristics of Schottky barrier diode based on nitrided InP(100)
- Current Transport Mechanisms and Capacitance Characteristic in the InN/InP Schottky Structures
- Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes
- Analysis of C-V Characteristics of InP(p)/InSb/Al2O3/Au MIS Structures in Wide Temperature Range
- First stages of surface steel nitriding: X-ray photoelectron spectroscopy and electrical measurements
- Electrical properties of gallium arsenide surfaces and interfaces treated by Ru(3+) ions
- Growth study of thin indium nitride layers on InP (100) by Auger electron spectroscopy and photoluminescence
- Morphology and optical properties of p-type porous GaAs(100) layers made by electrochemical etching
- Study of porous III–V semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL): Effect of ionic bombardment and nitridation process
- Illumination dependence of I–V and C–V characterization of Au/InSb/InP(100) Schottky structure
- Nitridation of InP(100) substrates studied by XPS spectroscopy and electrical analysis
- Electrical transport characteristics of Au/n-GaN Schottky diodes
- XPS, electric and photoluminescence-based analysis of the GaAs (100) nitridation
- Electrical characterization of Au/n-GaN Schottky diodes
- Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma
- Study and improvement of interfacial properties in a MIS structure based on p-type InP
- Analysis and simulation of Au/InSb/InP diode C–V characteristic: modeling and experiments
- Electrical parameters evolution of Au/InP(100) and Au/InSb/InP(100) systems with restructuring conditions
- Study and characterization of the structures Au/Al2O3/Si and Au/Al0/Al2O3/Si
- Study of AlxGa1−xAs/GaAs heterostructures by M-M EPES method
- Effect of InSb buffer layer in MIS structures based on InP
- Numerical analysis of forward I–V characteristics of Au/InP interface restructured by antimony
- Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency
- Experiments in MIS structure based on germanium and improvements of the interfacial properties
- Effect of InSb layer on the interfacial and electrical properties in the structures based on InP
- Electrical characterization of the Au/InP(100) and Au/InSb/InP(100) structures
- Electrical study of the Au/InSb/InP system
- Characterization of the M.S structure by the surface photoelectrical voltage method
- Modelization and characterization of Au/InSb/InP Schottky systems as a function of temperature
- Passivation of III-V compounds used for metal-insulator-InP(100) structures
- Electrical characterization of alumina layers deposited by evaporation cell on Si and restructured InP substrates
- Investigation by AES and EELS of (100) and
- Preparation and characterization of germanium substrates for MIS electronic devices
- AES and EELS analysis of the interaction between phosphorus and metallic indium
- Preparation and ESCA analysis of the germanium surface: electrical characterization of the and structures
- Structural and electrical characterizations of Ag-InP(100) interfaces stabilized by antimony
Publication venues
- Vacuum × 7
- Materials Chemistry and Physics × 5
- Applied Surface Science × 4
- Materials Science and Engineering C × 4
- Materials Science and Engineering B × 3
- DOAJ (DOAJ: Directory of Open Access Journals) × 2
Publications per year
- 20191
- 20181
- 20162
- 20152
- 20143
- 20131
- 20093
- 20081
- 20071
- 20062
Collaborations
Partner institutions : Université Blaise Pascal · Lyon 1 Université · Université Oran 1 Ahmed Ben Bella · Institut National des Sciences Appliquées de Lyon · Sigma Clermont
Co-authors’ countries : Algeria · Tunisia
Co-authors
- L. Bideux
- Christine Robert‐Goumet
- Guillaume Monier
- C. Jardin
- Boudali Akkal
- Sana Ben Khalifa
- Jean‐Marie Bluet
- S. Merle
- Farid Miloua
- Z. Benamara
- Georges E. Bremond
- Catherine Bru‐Chevallier
Bibliographic data from OpenAlex (open database).
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