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V. Donchev

Affiliation : Centre National de la Recherche Scientifique · Université Pierre-et-Marie-Curie

1Publications (affiliation in France)
105Total publications
721Citations
13h-index

Research profile

V. Donchev has 1 indexed publication (2002). Their work appears in “Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment”. Their most cited article, “Characterization of thick epitaxial GaAs layers for X-ray detection” (2002), has been cited 18 times. Their work is co-authored with at least 6 researchers, including institutions in Tunisia.

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Research areas

Semiconductor Quantum Structures and Devices
Semiconductor materials and interfaces
solar cell performance optimization
Silicon and Solar Cell Technologies
Advanced Semiconductor Detectors and Materials

Publications (1)

Characterization of thick epitaxial GaAs layers for X-ray detection
2002 · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · cited 18 times

Collaborations

Partner institutions : University of Sarajevo · University of Gabès

Co-authors’ countries : Tunisia

Co-authors

Bibliographic data from OpenAlex (open database).