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Denis Morris
Affiliation : Université de Sherbrooke
- 11Publications (affiliation in Canada)
- 169Total publications
- 2438Citations
- 23h-index
Research profile
Denis Morris has 11 indexed publications (2006–2020). Their work appears mainly in “Journal of Applied Physics”, “Nanotechnology” and “Nanomaterials”. Their most cited article, “Post-growth engineering of InAs/GaAs quantum dots’ band-gap using proton implantation and annealing” (2006), has been cited 23 times. Their work is co-authored with at least 5 researchers, including institutions in France, Tunisia.
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Create my free profile Add my publicationsResearch areas
- Semiconductor Quantum Structures and Devices
- Terahertz technology and applications
- Quantum Dots Synthesis And Properties
- Quantum and electron transport phenomena
- solar cell performance optimization
Publications (11)
- O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate
- Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing
- Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution
- Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing
- Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes
- Persistence of In/Ga intermixing beyond the emission energy blueshift saturation of proton-implanted InAs/GaAs quantum dots
- Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes
- Intermixing of InAs/GaAs quantum dots by proton implantation and rapid thermal annealing
- Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots
- Optical investigation of phosphorous-ion-implantation induced InAs/GaAs quantum dots' intermixing
- Post-growth engineering of InAs/GaAs quantum dots’ band-gap using proton implantation and annealing
Publication venues
- Journal of Applied Physics × 2
- Nanotechnology × 2
- Nanomaterials × 1
- Journal of Alloys and Compounds × 1
- Journal of Luminescence × 1
- Journal of Nanoscience and Nanotechnology × 1
Publications per year
- 20201
- 20151
- 20131
- 20111
- 20103
- 20091
- 20082
- 20061
Collaborations
Partner institutions : Centre National de la Recherche Scientifique · Institut interdisciplinaire d'innovation technologique · Laboratoire Nanotechnologies et Nanosystèmes · Université de Lyon · Institut des Nanotechnologies de Lyon
Co-authors’ countries : France · Tunisia
Co-authors
Bibliographic data from OpenAlex (open database).
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