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C. Vallée
Affiliation : Centre National de la Recherche Scientifique · Université Joseph Fourier
- 14Publications (affiliation in France)
- 331Total publications
- 3541Citations
- 34h-index
Research profile
C. Vallée has 14 indexed publications (2010–2020). Their work appears mainly in “Journal of Applied Physics”, “Journal of Materials Science Materials in Electronics” and “Applied Physics Letters”. Their most cited article, “Resistance switching in HfO2 metal-insulator-metal devices” (2010), has been cited 124 times. 2 of these publications date from the last three years of activity. Their work is co-authored with at least 12 researchers, including institutions in Tunisia.
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Create my free profile Add my publicationsResearch areas
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Copper Interconnects and Reliability
- Advanced Memory and Neural Computing
- Plasma Diagnostics and Applications
Publications (14)
- Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms
- AC and DC bias effect on capacitance–voltage nonlinearities in Au/HfO2/M (M = Pt, TiN, W, and AlCu) MIM capacitors: effect of the bottom electrode material
- On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)
- Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
- Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications
- Mechanisms of resistance switching in nanometric metal oxides and their dependence on electrodes
- Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction
- Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance–voltage measurements
- Impedance and electric modulus study of amorphous TiTaO thin films: highlight of the interphase effect
- Change in Admittance of HfO2 Metal-Insulator-Metal (MIM) Capacitors after dc Bias Stress
- Dielectric relaxation study of amorphous TiTaO thin films in a large operating temperature range
- Voltage-induced recovery of dielectric breakdown (high current resistance switching) in HfO2
- Resistance switching in HfO2 metal-insulator-metal devices
- Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors
Publication venues
- Journal of Applied Physics × 5
- Journal of Materials Science Materials in Electronics × 2
- Applied Physics Letters × 2
- Thin Solid Films × 1
- International Conference on Properties and Applications of Dielectric Materials (ICPADM) × 1
- physica status solidi (RRL) - Rapid Research Letters × 1
Publications per year
- 20202
- 20163
- 20151
- 20142
- 20132
- 20121
- 20111
- 20102
Collaborations
Partner institutions : Tunis El Manar University · Laboratoire des Technologies de la Microélectronique · Université Grenoble Alpes · Commissariat à l'Énergie Atomique et aux Énergies Alternatives · Laboratoire d'Électronique des Technologies de l'Information
Co-authors’ countries : Tunisia
Co-authors
- P. Gonon
- Alain Sylvestre
- C. Mannequin
- Marie‐Paule Besland
- A. Goullet
- A. Bsiesy
- Ahlem Rouahi
- Fatiha Challali
- Siamak Salimy
- V. Jousseaume
- Mohamed Saadi
- H. Grampeix
Bibliographic data from OpenAlex (open database).
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