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P. Gonon
Affiliation : Centre National de la Recherche Scientifique · Université Grenoble Alpes
- 24Publications (affiliation in France)
- 228Total publications
- 2978Citations
- 31h-index
Research profile
P. Gonon has 24 indexed publications (2006–2020). Their work appears mainly in “Journal of Applied Physics”, “Journal of Materials Science Materials in Electronics” and “Applied Physics Letters”. Their most cited article, “Resistance switching in HfO2 metal-insulator-metal devices” (2010), has been cited 124 times. 3 of these publications date from the last three years of activity. Their work is co-authored with at least 12 researchers, including institutions in Tunisia, Algeria.
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Create my free profile Add my publicationsResearch areas
- Semiconductor materials and devices
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Copper Interconnects and Reliability
- Ferroelectric and Piezoelectric Materials
Publications (24)
- Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms
- Correlations between first-principles calculations and electric properties of HfO2:Al2O3 alloys for metal–insulator–metal (MIM) capacitor applications
- AC and DC bias effect on capacitance–voltage nonlinearities in Au/HfO2/M (M = Pt, TiN, W, and AlCu) MIM capacitors: effect of the bottom electrode material
- On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)
- Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
- Reliability of HfO 2 metal–insulator–metal capacitors under AC stress
- Mechanisms of resistance switching in nanometric metal oxides and their dependence on electrodes
- Investigation of electrical properties of HfO2 metal–insulator–metal (MIM) devices
- Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction
- Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance–voltage measurements
- Change in Admittance of HfO2 Metal-Insulator-Metal (MIM) Capacitors after dc Bias Stress
- Charge transport and relaxation in hydrogenated barium titanate films and their potential for integrated supercapacitors
- Charge transport and relaxation in hydrogenated barium titanate films and their potential for integrated supercapacitors
- Voltage-induced recovery of dielectric breakdown (high current resistance switching) in HfO2
- Resistance switching in HfO2 metal-insulator-metal devices
- Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors
- Enhancement of the Double-Layer Capacitance in BaTiO[sub 3]:H-Based Solid Electrolyte
- EFFECT OF THE OXYGEN ADDITION IN THE SPUTTERING GAS ON THE DIELECTRIC PROPERTIES OF a-BaTiO3 FILMS
- Dielectric properties of amorphous BaTiO3 films deposited by RF magnetron sputtering
- Thermally stimulated currents in amorphous barium titanate thin films deposited by rf magnetron sputtering
- Space charge limited transient currents and oxygen vacancy mobility in amorphous BaTiO3 thin films
- Dielectric response of an epoxy resin when exposed to high temperatures
- Investigation of electrically active defects in amorphous barium titanate thin films
- Relaxation of defects in amorphous barium titanate thin films
Publication venues
- Journal of Applied Physics × 7
- Journal of Materials Science Materials in Electronics × 3
- Applied Physics Letters × 2
- Materials Science in Semiconductor Processing × 2
- Journal of Physics D Applied Physics × 1
- International Conference on Properties and Applications of Dielectric Materials (ICPADM) × 1
Publications per year
- 20203
- 20163
- 20151
- 20143
- 20131
- 20122
- 20111
- 20103
- 20081
- 20071
Collaborations
Partner institutions : Laboratoire des Technologies de la Microélectronique · Tunis El Manar University · Université Joseph Fourier · Commissariat à l'Énergie Atomique et aux Énergies Alternatives · Laboratoire d'Électronique des Technologies de l'Information
Co-authors’ countries : Tunisia · Algeria
Co-authors
- C. Vallée
- F. El Kamel
- C. Mannequin
- A. Bsiesy
- M. Kassmi
- V. Jousseaume
- Mohamed Saadi
- F. Jomni
- Alain Sylvestre
- H. Grampeix
- Corentin Jorel
- E. Jalaguier
Bibliographic data from OpenAlex (open database).
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