Accueil › Annuaire des chercheurs › C. Vallée

C. Vallée

Affiliation : Centre National de la Recherche Scientifique · Université Joseph Fourier

• 14Publications (affiliation française)
• 331Publications au total
• 3541Citations
• 34Indice h

ORCIDOpenAlex

Domaines de recherche

• Semiconductor materials and devices
• Ferroelectric and Negative Capacitance Devices
• Copper Interconnects and Reliability
• Advanced Memory and Neural Computing
• Plasma Diagnostics and Applications

Publications (14)

• Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms
  2020 · Journal of Materials Science Materials in Electronics · cité 10 fois
• AC and DC bias effect on capacitance–voltage nonlinearities in Au/HfO2/M (M = Pt, TiN, W, and AlCu) MIM capacitors: effect of the bottom electrode material
  2020 · Journal of Materials Science Materials in Electronics · cité 8 fois
• On the mechanisms of cation injection in conducting bridge memories: The case of HfO2 in contact with noble metal anodes (Au, Cu, Ag)
  2016 · Journal of Applied Physics · cité 51 fois
• Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO2 thin films grown by the atomic layer deposition technique
  2016 · Journal of Applied Physics · cité 11 fois
• Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications
  2016 · Thin Solid Films · cité 8 fois
• Mechanisms of resistance switching in nanometric metal oxides and their dependence on electrodes
  2015 · International Conference on Properties and Applications of Dielectric Materials (ICPADM) · cité 2 fois
• Differences between direct current and alternating current capacitance nonlinearities in high-k dielectrics and their relation to hopping conduction
  2014 · Journal of Applied Physics · cité 26 fois
• Experimental evaluation of the forming process of virgin HfO2 memory cells by capacitance–voltage measurements
  2014 · physica status solidi (RRL) - Rapid Research Letters · cité 2 fois
• Impedance and electric modulus study of amorphous TiTaO thin films: highlight of the interphase effect
  2013 · Journal of Physics D Applied Physics · cité 88 fois
• Change in Admittance of HfO2 Metal-Insulator-Metal (MIM) Capacitors after dc Bias Stress
  2013 · ECS Solid State Letters · cité 7 fois
• Dielectric relaxation study of amorphous TiTaO thin films in a large operating temperature range
  2012 · Journal of Applied Physics · cité 6 fois
• Voltage-induced recovery of dielectric breakdown (high current resistance switching) in HfO2
  2011 · Applied Physics Letters · cité 19 fois
• Resistance switching in HfO2 metal-insulator-metal devices
  2010 · Journal of Applied Physics · cité 124 fois
• Electrode oxygen-affinity influence on voltage nonlinearities in high-k metal-insulator-metal capacitors
  2010 · Applied Physics Letters · cité 45 fois

Revues de publication

• Journal of Applied Physics × 5
• Journal of Materials Science Materials in Electronics × 2
• Applied Physics Letters × 2
• Thin Solid Films × 1
• International Conference on Properties and Applications of Dielectric Materials (ICPADM) × 1
• physica status solidi (RRL) - Rapid Research Letters × 1

Publications par année

• 20202
• 20163
• 20151
• 20142
• 20132
• 20121
• 20111
• 20102

Collaborations

Établissements partenaires : Tunis El Manar University · Laboratoire des Technologies de la Microélectronique · Université Grenoble Alpes · Commissariat à l'Énergie Atomique et aux Énergies Alternatives · Laboratoire d'Électronique des Technologies de l'Information

Pays des co-auteurs : Tunisie

Co-auteurs

• P. Gonon
• Alain Sylvestre
• C. Mannequin
• Marie‐Paule Besland
• A. Goullet
• A. Bsiesy
• Ahlem Rouahi
• Fatiha Challali
• Siamak Salimy
• V. Jousseaume
• Mohamed Saadi
• H. Grampeix

Données bibliographiques issues d’OpenAlex (base ouverte).