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Daniel Alquier

Affiliation : Université de Tours · Centre National de la Recherche Scientifique · GREMAN, Matériaux, Microélectronique, Acoustique, Nanotechnologies

4Publications (affiliation in France)
296Total publications
2521Citations
25h-index

ORCID OpenAlex

Research profile

Daniel Alquier has 4 indexed publications (1996–2016). Their work appears mainly in “Ion Beam Modification of Materials”, “Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms” and “Applied Physics Letters”. Their most cited article, “The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon” (1997), has been cited 33 times. Their work is co-authored with at least 12 researchers, including institutions in Morocco.

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Research areas

Silicon Carbide Semiconductor Technologies
Semiconductor materials and interfaces
GaN-based semiconductor devices and materials
Semiconductor materials and devices
Silicon and Solar Cell Technologies

Publications (4)

Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy
2016 · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · cited 3 times
The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon
1997 · Applied Physics Letters · cited 33 times
Correlation between End-Of-range defect densities and electrical properties of p+/n junctions formed by B implantation into Ge-preamorphised Si substrates
1996 · Ion Beam Modification of Materials
The effect of boron doping on the thermal behaviour of EOR defects in Silicon
1996 · Ion Beam Modification of Materials

Publication venues

Ion Beam Modification of Materials × 2
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms × 1
Applied Physics Letters × 1

Publications per year

20161
19971
19962

Collaborations

Partner institutions : Centre d’Élaboration de Matériaux et d’Études Structurales · Laboratoire d'Analyse et d'Architecture des Systèmes · STMicroelectronics (France) · Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications · Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Co-authors’ countries : Morocco

Co-authors

Bibliographic data from OpenAlex (open database).