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D. Mathiot

Affiliation : Centre National de la Recherche Scientifique

2Publications (affiliation in France)
207Total publications
2905Citations
31h-index

Research profile

D. Mathiot has 2 indexed publications (1996–1997). Their work appears mainly in “Applied Physics Letters” and “Ion Beam Modification of Materials”. Their most cited article, “The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon” (1997), has been cited 33 times. Their work is co-authored with at least 5 researchers.

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Research areas

Semiconductor materials and devices
Semiconductor materials and interfaces
Silicon and Solar Cell Technologies
Ion-surface interactions and analysis
Advancements in Semiconductor Devices and Circuit Design

Publications (2)

The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon
1997 · Applied Physics Letters · cited 33 times
The effect of boron doping on the thermal behaviour of EOR defects in Silicon
1996 · Ion Beam Modification of Materials

Publication venues

Applied Physics Letters × 1
Ion Beam Modification of Materials × 1

Publications per year

19971
19961

Collaborations

Partner institutions : Laboratoire d'Analyse et d'Architecture des Systèmes · Centre d’Élaboration de Matériaux et d’Études Structurales

Co-authors

Bibliographic data from OpenAlex (open database).