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A. Boursali
Affiliation : University of Abou Bekr Belkaïd
- 2Publications (affiliation in Algeria)
- 6Total publications
- 7Citations
- 1h-index
Research profile
A. Boursali has 2 indexed publications (2020–2022). Their work appears mainly in “Research Square” and “International Journal of Electrical and Computer Engineering (IJECE)”. Their most cited article, “DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application” (2020), has been cited 7 times. Their work is co-authored with at least 3 researchers.
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Create my free profile Add my publicationsResearch areas
- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Radio Frequency Integrated Circuit Design
- Silicon Carbide Semiconductor Technologies
- Advanced Power Amplifier Design
Publications (2)
- Impact of Indium concentration In0.52 Al0.48 As/Inx Ga1-x As/InP HEMT device on DC and AC performances
- DC and RF characteristics of 20 nm gate length InAlAs/InGaAs/InP HEMTs for high frequency application
Publication venues
- Research Square × 1
- International Journal of Electrical and Computer Engineering (IJECE) × 1
Publications per year
- 20221
- 20201
Co-authors
Bibliographic data from OpenAlex (open database).
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