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A. Bouhdada
Affiliation : University of Hassan II Casablanca
- 27Publications (affiliation in Morocco)
- 30Total publications
- 197Citations
- 8h-index
Research profile
A. Bouhdada has 27 indexed publications (1995–2011). Their work appears mainly in “Microelectronics Journal”, “Journal of Applied Physics” and “Active and Passive Electronic Components”. Their most cited article, “Impact of the defects on the electrical and optical properties of AlGaN ultraviolet photodetectors” (2002), has been cited 44 times. Their work is co-authored with at least 12 researchers.
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Create my free profile Add my publicationsResearch areas
- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Advancements in Semiconductor Devices and Circuit Design
- Metallic Glasses and Amorphous Alloys
- Magnetic Properties and Applications
Publications (27)
- Magnetization studies in amorphous Co80-x Gdx B20
- Electrical and optical proprieties of photodiodes based on ZnSe material
- Modeling of the spectral response of PIN photodetectors Impact of exposed zone thickness, surface recombination velocity and trap concentration
- Influence of the defects on the I-V characteristics for LDD-nMOSFETs
- Impact of the defects on the electrical and optical properties of AlGaN ultraviolet photodetectors
- Relation between the leakage currents and defects in oxide and interface Si/SiO/sub 2/ in MOS devices
- The n-type metal oxide semiconductor field-effect transistor bias impact on the modelling of the gate-induced drain leakage current
- Modeling of the I–V Characteristics for LDD‐nMOSFETs in Relation with Defects Induced by Hot‐Carrier Injection
- Modeling of gate-induced drain leakage current in n-type metal–oxide–semiconductor field effect transistor
- Modeling of the threshold voltage variation for a stressed submicronic MOSFET
- Magnetic study in amorphous Fe67Y33 alloy
- Impact of the Stress on the Sub‐Micron N‐Metal Oxide Semiconductor Field Effect Transistor Characteristics
- Magnetic coupling in amorphous Fe80−xGdxB20 alloys
- Modeling of the spectral response of AlxGa1−xN Schottky ultraviolet photodetectors
- Modeling of the spectral response of AlxGa1−xN p-n junction photodetectors
- Modeling of Interface Defect Distribution for an n‐MOSFETs Under Hot‐Carrier Stressing
- Modeling of Surface Potential and Threshold Voltage of LDD nMOSFET′s with Localized Defects
- Modelling of the surface potential evolution for a stressed submicronic MOSFET
- Effect of defects localised in the oxide of submicrometer NMOS transistor on substrate and drain currents
- Influence of Gd on the Magnetic Properties of Amorphous (Fe1—xGdx)80B20
- Magnetic properties and exchange interactions in TGdB amorphous alloys (T=FE, Co)
- New model of gate-induced drain current density in an NMOS transistor
- Modelling of gate-induced drain leakage in relation to technological parameters and temperature
- Two new temperature compensated current sources
- Relation between the leakage currents and the defects created in the oxide and at the interface in a short channel NMOS transistor
- Interface states effect and influence of the topological and technological parameters on the transfer inefficiency in the surface charge-coupled device (SCCD)
- MOS capacitor holding time and diffusion length at DRAM refresh test temperature
Publication venues
- Microelectronics Journal × 5
- Journal of Applied Physics × 4
- Active and Passive Electronic Components × 4
- Microelectronics Reliability × 3
- PRSM × 1
- Applied Physics Letters × 1
Publications per year
- 20111
- 20033
- 20024
- 20014
- 20006
- 19993
- 19981
- 19973
- 19961
- 19951
Collaborations
Partner institutions : Université Hassan II Mohammedia · Sidi Mohamed Ben Abdellah University
Co-authors
- R. Marrakh
- Abdelkader Touhami
- A. Hassini
- M. Hanzaz
- Soumia Bakkali
- A. Nouaçry
- Hassan Lassri
- I. Mansouri
- R. Krishnan
- B Chaker
- M. Hamdoun
- B. Alaoui
Bibliographic data from OpenAlex (open database).
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