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Jason Thomas Ryan

Affiliation : National Institute of Standards and Technology

• 1Publications (affiliation in the United States)
• 112Total publications
• 1116Citations
• 18h-index

ORCIDOpenAlex

Research profile

Jason Thomas Ryan has 1 indexed publication (2016). Their work appears in “IEEE Transactions on Electron Devices”. Their most cited article, “Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs” (2016), has been cited 94 times. Their work is co-authored with at least 5 researchers.

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Research areas

• Semiconductor materials and devices
• Semiconductor materials and interfaces
• Ferroelectric and Negative Capacitance Devices
• Integrated Circuits and Semiconductor Failure Analysis
• Quantum and electron transport phenomena

Publications (1)

• Modeling Early Breakdown Failures of Gate Oxide in SiC Power MOSFETs
  2016 · IEEE Transactions on Electron Devices · cited 94 times

Collaborations

Partner institutions : GlobalFoundries (United States) · George Mason University

Co-authors

• D.E. Ioannou
• Jason Paul Campbell
• Zakariae Chbili
• Kin P. Cheung
• Jaafar Chbili

Bibliographic data from OpenAlex (open database).