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Thomas Huault

Affiliation : Centre National de la Recherche Scientifique · Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications

• 4Publications (affiliation in France)
• 18Total publications
• 329Citations
• 11h-index

ORCIDOpenAlex

Research profile

Thomas Huault has 4 indexed publications (2008–2012). Their work appears mainly in “Applied Physics Letters”, “Journal of Applied Physics” and “Springer eBooks”. Their most cited article, “Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy” (2009), has been cited 31 times. Their work is co-authored with at least 5 researchers, including institutions in Morocco.

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Research areas

• GaN-based semiconductor devices and materials
• Semiconductor Quantum Structures and Devices
• Acoustic Wave Resonator Technologies
• Silicon Carbide Semiconductor Technologies
• Luminescence Properties of Advanced Materials

Publications (4)

• Mechanism of GaN quantum dot overgrowth by Al0.5Ga0.5N: Strain evolution and phase separation
  2012 · Journal of Applied Physics · cited 6 times
• Effects of capping on GaN quantum dots deposited on Al0.5Ga0.5N by molecular beam epitaxy
  2009 · Applied Physics Letters · cited 31 times
• Phase separation in GaN/AlGaN quantum dots
  2009 · Applied Physics Letters · cited 17 times
• Structural and morphological characterization of GaN/AlGaN quantum dots by transmission electron microscopy
  2008 · Springer eBooks

Publication venues

• Applied Physics Letters × 2
• Journal of Applied Physics × 1
• Springer eBooks × 1

Publications per year

• 20121
• 20092
• 20081

Collaborations

Partner institutions : Centre National pour la Recherche Scientifique et Technique (CNRST) · Université Nice Sophia Antipolis · Université Joseph Fourier · Institut Nanosciences et Cryogénie · Fédération des Sciences Chimiques de Marseille

Co-authors’ countries : Morocco

Co-authors

• J. Brault
• Philippe Vennéguès
• Maxim Korytov
• Thomas Neisius
• Jean‐Luc Rouvière

Bibliographic data from OpenAlex (open database).