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Jun Chen
Affiliation : Centre National de la Recherche Scientifique · École Nationale Supérieure d'Ingénieurs de Caen · Commissariat à l'Énergie Atomique et aux Énergies Alternatives · Normandie Université · Centre de Recherche sur les Ions, les Matériaux et la Photonique · Université de Caen Normandie
- 14Publications (affiliation in France)
- 82Total publications
- 721Citations
- 15h-index
Research profile
Jun Chen has 14 indexed publications (2006–2025). Their work appears mainly in “Modelling and Simulation in Materials Science and Engineering”, “Computational Condensed Matter” and “Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics”. Their most cited article, “The atomic and electronic structure of dislocations in Ga-based nitride semiconductors” (2006), has been cited 26 times. 2 of these publications date from the last three years of activity. Their work is co-authored with at least 7 researchers, including institutions in India, Algeria, Tunisia.
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Create my free profile Add my publicationsResearch areas
- GaN-based semiconductor devices and materials
- Semiconductor materials and interfaces
- Silicon Carbide Semiconductor Technologies
- Fiber-reinforced polymer composites
- Carbon Nanotubes in Composites
Publications (14)
- m-Line Frank–Shockley Partial Dislocations in Wurtzite GaN: Atomistic Calculations and High Resolution Electron Microscopy Imaging
- Strain induced phase transitions and hysteresis in aluminium nitride: a density functional theory study
- First-principles investigation of a -line Shockley partial dislocations in wurtzite GaN: core reconstruction and electronic structure
- Interactions of amine functional group with Stone-Wales defects on single-walled carbon nanotubes: A theoretical study
- Core properties and the role of screw dislocations in the bulk n-type conductivity in InN
- First-principles calculations of threading screw dislocations in AlN and InN
- Structural and electronic properties of a-edge dislocations along ⟨1-100⟩ in GaN
- Strain and elastic constants of GaN and InN
- Core properties and mobility of the basal screw dislocation in wurtzite GaN: a density functional theory study
- Energetics and core structure of the undissociated basal screw dislocation in wurtzite GaN
- Ab initio study of chemical bond interactions between covalently functionalized carbon nanotubes via amide, ester and anhydride linkages
- Electronic structure of threading dislocations in wurtzite GaN
- The 60° basal dislocation in wurtzite GaN: Energetics, electronic and core structures
- The atomic and electronic structure of dislocations in Ga-based nitride semiconductors
Publication venues
- Modelling and Simulation in Materials Science and Engineering × 2
- Computational Condensed Matter × 2
- Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics × 2
- ACS Applied Electronic Materials × 1
- Journal of Physics Condensed Matter × 1
- Physical Chemistry Chemical Physics × 1
Publications per year
- 20251
- 20241
- 20222
- 20191
- 20182
- 20171
- 20163
- 20151
- 20131
- 20061
Collaborations
Partner institutions : Institut Pprime · Université de Poitiers · Central Institute of Medicinal and Aromatic Plants · University of Béjaïa · Centre de Recherche en Microelectronique et Nanotechnologie
Co-authors’ countries : India · Algeria · Tunisia
Co-authors
Bibliographic data from OpenAlex (open database).
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