Home › Researcher directory › Rabah Cherfi
Rabah Cherfi
Affiliation : University of Sciences and Technology Houari Boumediene
- 19Publications (affiliation in Algeria)
- 33Total publications
- 120Citations
- 6h-index
Research profile
Rabah Cherfi has 19 indexed publications (1999–2025). Their work appears mainly in “Thin Solid Films”, “Applied Surface Science” and “Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics”. Their most cited article, “Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses” (2011), has been cited 23 times. Their work is co-authored with at least 12 researchers, including institutions in France.
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Create my free profile Add my publicationsResearch areas
- Thin-Film Transistor Technologies
- Silicon and Solar Cell Technologies
- Semiconductor materials and interfaces
- Organic Electronics and Photovoltaics
- Advancements in Semiconductor Devices and Circuit Design
Publications (19)
- High sensing efficiency for low NH3 vapour concentration of thin ZnO/p-Si hetero-junctions
- Physical aging of PC : PS blends: Dynamic mechanical analysis and nuclear magnetic resonance studies
- Study of boron doped amorphous silicon lightly hydrogenated prepared by DC magnetron sputtering for infrared detectors applications
- Numerical simulation and validity of the surface photovoltage method in amorphous silicon with a Schottky contact
- Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses
- Structural and optical properties of a-Si1−xCx:H films synthesized by dc magnetron sputtering technique
- The annealing temperature effect on the electrical properties of boron‐doped hydrogenated amorphous silicon a‐Si:H(B)
- N and P type top‐gate microcrystalline silicon TFTs processed at low temperature (T < 200 °C) on the same glass substrate
- Correlation between Physicochemical and Electrical Properties of Hydrogenated Amorphous Silicon Doped with Boron: Effect of Thermal Annealing
- Deposition temperature effects on the characteristics of a‐Si:H deposited by pulsed DC magnetron sputtering
- Effects of trimethylphosphine incorporation on hydrogenated amorphous silicon (a-Si:H) properties
- Effects of Hydrogen Partial Pressure on Boron-Doped Hydrogenated Amorphous Silicon (a-Si:H(B)) Properties
- Hydrogenated amorphous silicon deposited by pulsed DC magnetron sputtering. Deposition temperature effect
- Stability of Microcrystalline Silicon TFTs
- Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1−xGex) deposited by DC magnetron sputtering at high rate
- Hydrogen interaction on metal/hydrogenated amorphous silicon Schottky structures: adsorption/desorption effects
- Hydrogenated amorphous silicon deposited by DC magnetron sputtering at high temperature
- Comparison of Deposited Polycrystalline Films and Crystallized Silicon from a-Si:H Films
- Thin Films Hydrogenated Silicon Deposited by Direct Current Magnetron Sputtering at High Rate
Publication venues
- Thin Solid Films × 3
- Applied Surface Science × 2
- Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics × 2
- Materials science forum × 2
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena × 2
- Sensors and Actuators A Physical × 1
Publications per year
- 20251
- 20221
- 20201
- 20181
- 20111
- 20103
- 20094
- 20082
- 20061
- 20013
Collaborations
Partner institutions : Institut d'Électronique et des Technologies du numéRique · Centre National de la Recherche Scientifique · Université Rennes 1 · Université de Rennes · University of Ghardaia
Co-authors’ countries : France
Co-authors
- M. Aoucher
- A. Rahal
- Mohamed Kechouane
- H.Y. Seba
- Ghania Farhi
- Abdelkrim Fedala
- A. Benabdelmoumen
- Nabil Khelifati
- Amer Brighet
- L. Chabane
- F. Kezzoula
- Abdlkrim Fedala
Bibliographic data from OpenAlex (open database).
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