Accueil › Annuaire des chercheurs › Rabah Cherfi

Rabah Cherfi

Affiliation : University of Sciences and Technology Houari Boumediene

• 19Publications (affiliation algérienne)
• 33Publications au total
• 120Citations
• 6Indice h

OpenAlex

Domaines de recherche

• Thin-Film Transistor Technologies
• Silicon and Solar Cell Technologies
• Semiconductor materials and interfaces
• Organic Electronics and Photovoltaics
• Advancements in Semiconductor Devices and Circuit Design

Publications (19)

• High sensing efficiency for low NH3 vapour concentration of thin ZnO/p-Si hetero-junctions
  2025 · Sensors and Actuators A Physical · cité 2 fois
• Physical aging of PC : PS blends: Dynamic mechanical analysis and nuclear magnetic resonance studies
  2022 · Polymer Engineering and Science · cité 1 fois
• Study of boron doped amorphous silicon lightly hydrogenated prepared by DC magnetron sputtering for infrared detectors applications
  2020 · Infrared Physics & Technology · cité 13 fois
• Numerical simulation and validity of the surface photovoltage method in amorphous silicon with a Schottky contact
  2018 · Semiconductor Science and Technology · cité 1 fois
• Aluminium-induced crystallization of amorphous silicon films deposited by DC magnetron sputtering on glasses
  2011 · Applied Surface Science · cité 23 fois
• Structural and optical properties of a-Si1−xCx:H films synthesized by dc magnetron sputtering technique
  2010 · Applied Surface Science · cité 12 fois
• The annealing temperature effect on the electrical properties of boron‐doped hydrogenated amorphous silicon a‐Si:H(B)
  2010 · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · cité 9 fois
• N and P type top‐gate microcrystalline silicon TFTs processed at low temperature (T < 200 °C) on the same glass substrate
  2010 · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · cité 3 fois
• Correlation between Physicochemical and Electrical Properties of Hydrogenated Amorphous Silicon Doped with Boron: Effect of Thermal Annealing
  2009 · Materials science forum · cité 4 fois
• Deposition temperature effects on the characteristics of a‐Si:H deposited by pulsed DC magnetron sputtering
  2009 · physica status solidi (a) · cité 3 fois
• Effects of trimethylphosphine incorporation on hydrogenated amorphous silicon (a-Si:H) properties
  2009 · Physics Procedia · cité 2 fois
• Effects of Hydrogen Partial Pressure on Boron-Doped Hydrogenated Amorphous Silicon (a-Si:H(B)) Properties
  2009 · Materials science forum · cité 1 fois
• Hydrogenated amorphous silicon deposited by pulsed DC magnetron sputtering. Deposition temperature effect
  2008 · Thin Solid Films · cité 19 fois
• Stability of Microcrystalline Silicon TFTs
  2008 · ECS Transactions · cité 4 fois
• Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1−xGex) deposited by DC magnetron sputtering at high rate
  2006 · Materials Science in Semiconductor Processing · cité 13 fois
• Hydrogen interaction on metal/hydrogenated amorphous silicon Schottky structures: adsorption/desorption effects
  2001 · Thin Solid Films · cité 3 fois
• Hydrogenated amorphous silicon deposited by DC magnetron sputtering at high temperature
  2001 · Thin Solid Films · cité 1 fois
• Comparison of Deposited Polycrystalline Films and Crystallized Silicon from a-Si:H Films
  2001 · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · cité 1 fois
• Thin Films Hydrogenated Silicon Deposited by Direct Current Magnetron Sputtering at High Rate
  1999 · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · cité 2 fois

Revues de publication

• Thin Solid Films × 3
• Applied Surface Science × 2
• Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics × 2
• Materials science forum × 2
• Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena × 2
• Sensors and Actuators A Physical × 1

Publications par année

• 20251
• 20221
• 20201
• 20181
• 20111
• 20103
• 20094
• 20082
• 20061
• 20013

Collaborations

Établissements partenaires : Institut d'Électronique et des Technologies du numéRique · Centre National de la Recherche Scientifique · Université Rennes 1 · Université de Rennes · University of Ghardaia

Pays des co-auteurs : France

Co-auteurs

• M. Aoucher
• A. Rahal
• Mohamed Kechouane
• H.Y. Seba
• Ghania Farhi
• Abdelkrim Fedala
• A. Benabdelmoumen
• Nabil Khelifati
• Amer Brighet
• L. Chabane
• F. Kezzoula
• Abdlkrim Fedala

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