Accueil › Annuaire des chercheurs › Tayeb Mohammed‐Brahim
Tayeb Mohammed‐Brahim
Affiliation : Centre National de la Recherche Scientifique · Institut d'Électronique et des Technologies du numéRique
- 39Publications (affiliation française)
- 469Publications au total
- 1581Citations
- 21Indice h
Profil de recherche
Tayeb Mohammed‐Brahim compte 39 publications référencées (1986–2022). Ses travaux paraissent principalement dans « Journal of Non-Crystalline Solids », « Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics » et « Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ». Son article le plus cité, « Observation of negative capacitance in a-SiC:H/a-Si:H UV photodetectors » (2006), a été cité 44 fois. Ses travaux sont cosignés avec au moins 12 chercheurs, notamment dans des établissements de Algérie, Tunisie.
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Créer mon profil gratuit Ajouter mes publicationsDomaines de recherche
- Thin-Film Transistor Technologies
- Organic Electronics and Photovoltaics
- Silicon and Solar Cell Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
Publications (39)
- Low doping in-situ strategy leading to polysilicon based TFTs exhibiting high stability under stress effects and enhanced electrical performances
- Crystallization of P Type Amorphous Silicon (a-Si: H) by AIC Method: Effect of Aluminum Thickness
- Investigation of improved PV parameters through AMPS-1D in micromorph tandem solar cells with a microcrystalline tunnel recombination junction
- Effect of total gas pressure in sputtered hydrogenated amorphous silicon
- Surface Passivation by Amorphous Silicon a-Si: H Thin Film in Presence of the SiNx: H Layer
- The annealing temperature effect on the electrical properties of boron‐doped hydrogenated amorphous silicon a‐Si:H(B)
- Low temperature deposition of microcrystalline silicon germanium Si1‐xGex by RF‐PECVD
- N and P type top‐gate microcrystalline silicon TFTs processed at low temperature (T < 200 °C) on the same glass substrate
- Deposition temperature effects on the characteristics of a‐Si:H deposited by pulsed DC magnetron sputtering
- Stability of Microcrystalline Silicon TFTs
- Dependence of photovoltaic parameters on grain size and density of states in n+–i–p+ and p+–i–n+ polycrystalline silicon solar cells
- Experimental study and two-dimensional modeling of avalanche breakdown voltage in polycrystalline silicon p-n junctions
- Observation of negative capacitance in a-SiC:H/a-Si:H UV photodetectors
- Structural, optical and electrical properties of hydrogenated amorphous silicon germanium (a-Si1−xGex) deposited by DC magnetron sputtering at high rate
- Two-dimensional simulation of the effects of grain boundaries on theC–Vcharacteristics of P+N polysilicon diodes
- Experimental analysis and 2D-simulation of C–V characteristics in Ag/poly(Si)/ITO/glass Schottky diode
- Polycristalline silicon with very low phosporus content
- Study of the solid phase crystallization behavior of amorphous sputtered silicon by X-ray diffraction and electrical measurements
- Study of the stability of polycrystalline silicon by means of the behavior of thin film transistors under gate bias stress
- Numerical Modeling and Simulation of Output Parameters in Poly-Si Homojunction nip (or pin) Solar Cells
- Density of states in the channel material of low temperature polycrystalline silicon thin film transistors
- Numerical simulation of low-field thermally stimulated conductivity in a-Si:H
- State creation induced by gate bias stress in unhydrogenated polysilicon TFTs
- Erbium-doped hydrogenated amorphous silicon prepared by dc sputtering
- Leakage Current of Unhydrogenated Solid Phase Crystallized Silicon Thin Film Transistors
- Study of Polysilicon Produced by Solid Phase Crystallization of Hydrogenated Amorphous Silicon Deposited at High Rate
- Crystallization of hydrogenated amorphous silicon deposited at high rate by dc magnetron sputtering
- Oxygen enhancement of 1-54 μm Er3+luminescence in hydrogenated amorphous silicon
- Gate bias stress in hydrogenated and unhydrogenated polysilicon thin film transistors
- Acceptor and donor centers introduced by oxygen ionosorption at the a-Si:H film surface
- Effects of the in-situ drain doping on hot-carrier degradation in polysilicon thin film transistors
- Oxygen adsorption-desorption effect on the electrical properties of a-Si:H layers
- Optimisation of the hydrogen content in a-Si:H deposited at high rate by dc magnetron sputtering
- Electrical conductance variation of a-Si: H films during a temperature programmed desorption
- Hydrogen analysis in hydrogenated amorphous silicon thin films produced by d.c. reactive magnetron sputtering
- Temperature dependence of steady-state photoconductivity in hydrogenated amorphous silicon
- Electronic Transport Properties of High Deposition Rate a-Si:H Material
- Study of Band Tails in a-SiGe:H Alloys from Time of Flight and Thermally Stimulated Current Experiments
- Surface Problems of Mercuric Iodide Crystals Used as X and Gamma Ray Detectors
Revues de publication
- Journal of Non-Crystalline Solids × 5
- Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics × 4
- Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena × 3
- Philosophical Magazine B × 3
- HAL × 2
- Thin Solid Films × 2
Publications par année
- 20221
- 20191
- 20161
- 20142
- 20103
- 20091
- 20081
- 20072
- 20062
- 20053
Collaborations
Établissements partenaires : Université Rennes 1 · University of Sciences and Technology Houari Boumediene · Université de Rennes · Laboratoire Universitaire des Sciences Appliquées de Cherbourg · Supélec
Pays des co-auteurs : Algérie · Tunisie
Co-auteurs
- Olivier Bonnaud
- F. Raoult
- A. Rahal
- Claude Simon
- Karine Mourgues
- B. Tala‐Ighil
- Laurent Pichon
- Nathalie Coulon
- Rabah Cherfi
- Régis Rogel
- Khalid Kandoussi
- Abdelkrim Fedala
Données bibliographiques issues d’OpenAlex (base ouverte).
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