Accueil › Annuaire des chercheurs › B. Gruzza
B. Gruzza
Affiliation : Centre National de la Recherche Scientifique · Institut Pascal · Université Clermont Auvergne
- 42Publications (affiliation française)
- 154Publications au total
- 1791Citations
- 22Indice h
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Créer mon profil gratuit Ajouter mes publicationsDomaines de recherche
- Semiconductor materials and interfaces
- Electron and X-Ray Spectroscopy Techniques
- Ion-surface interactions and analysis
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
Publications (42)
- The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE
- Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
- Synthesis and Study of Stable and Size-Controlled ZnO–SiO2 Quantum Dots: Application as a Humidity Sensor
- Study of the surface state density and potential in MIS diode Schottky using the surface photovoltage method
- Study of the characteristics current-voltage and capacitance-voltage in nitride GaAs Schottky diode
- Effects of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs
- Electrical behaviour and analytical modelling of I-V and C-V characteristics of Schottky barrier diode based on nitrided InP(100)
- Current Transport Mechanisms and Capacitance Characteristic in the InN/InP Schottky Structures
- Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes
- Analysis of C-V Characteristics of InP(p)/InSb/Al2O3/Au MIS Structures in Wide Temperature Range
- First stages of surface steel nitriding: X-ray photoelectron spectroscopy and electrical measurements
- Electrical properties of gallium arsenide surfaces and interfaces treated by Ru(3+) ions
- Growth study of thin indium nitride layers on InP (100) by Auger electron spectroscopy and photoluminescence
- Morphology and optical properties of p-type porous GaAs(100) layers made by electrochemical etching
- Study of porous III–V semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL): Effect of ionic bombardment and nitridation process
- Illumination dependence of I–V and C–V characterization of Au/InSb/InP(100) Schottky structure
- Nitridation of InP(100) substrates studied by XPS spectroscopy and electrical analysis
- Electrical transport characteristics of Au/n-GaN Schottky diodes
- XPS, electric and photoluminescence-based analysis of the GaAs (100) nitridation
- Electrical characterization of Au/n-GaN Schottky diodes
- Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma
- Study and improvement of interfacial properties in a MIS structure based on p-type InP
- Analysis and simulation of Au/InSb/InP diode C–V characteristic: modeling and experiments
- Electrical parameters evolution of Au/InP(100) and Au/InSb/InP(100) systems with restructuring conditions
- Study and characterization of the structures Au/Al2O3/Si and Au/Al0/Al2O3/Si
- Study of AlxGa1−xAs/GaAs heterostructures by M-M EPES method
- Effect of InSb buffer layer in MIS structures based on InP
- Numerical analysis of forward I–V characteristics of Au/InP interface restructured by antimony
- Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency
- Experiments in MIS structure based on germanium and improvements of the interfacial properties
- Effect of InSb layer on the interfacial and electrical properties in the structures based on InP
- Electrical characterization of the Au/InP(100) and Au/InSb/InP(100) structures
- Electrical study of the Au/InSb/InP system
- Characterization of the M.S structure by the surface photoelectrical voltage method
- Modelization and characterization of Au/InSb/InP Schottky systems as a function of temperature
- Passivation of III-V compounds used for metal-insulator-InP(100) structures
- Electrical characterization of alumina layers deposited by evaporation cell on Si and restructured InP substrates
- Investigation by AES and EELS of (100) and
- Preparation and characterization of germanium substrates for MIS electronic devices
- AES and EELS analysis of the interaction between phosphorus and metallic indium
- Preparation and ESCA analysis of the germanium surface: electrical characterization of the and structures
- Structural and electrical characterizations of Ag-InP(100) interfaces stabilized by antimony
Co-auteurs
- L. Bideux
- Christine Robert‐Goumet
- Guillaume Monier
- C. Jardin
- Boudali Akkal
- Sana Ben Khalifa
- Jean‐Marie Bluet
- S. Merle
- Farid Miloua
- Z. Benamara
- Georges E. Bremond
- Catherine Bru‐Chevallier
Données bibliographiques issues d’OpenAlex (base ouverte).
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