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L. Bideux
Affiliation : Institut Pascal
- 21Publications (affiliation in France)
- 121Total publications
- 1324Citations
- 17h-index
Research profile
L. Bideux has 21 indexed publications (1997–2018). Their work appears mainly in “Applied Surface Science”, “Materials Science and Engineering C” and “Vacuum”. Their most cited article, “Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency” (2000), has been cited 133 times. 2 of these publications date from the last three years of activity. Their work is co-authored with at least 12 researchers, including institutions in Tunisia, Algeria.
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Create my free profile Add my publicationsResearch areas
- Semiconductor materials and interfaces
- Electron and X-Ray Spectroscopy Techniques
- Semiconductor materials and devices
- Ion-surface interactions and analysis
- GaN-based semiconductor devices and materials
Publications (21)
- Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
- Synthesis and Study of Stable and Size-Controlled ZnO–SiO2 Quantum Dots: Application as a Humidity Sensor
- Effects of the GaN layers and the annealing on the electrical properties in the Schottky diodes based on nitrated GaAs
- First stages of surface steel nitriding: X-ray photoelectron spectroscopy and electrical measurements
- Growth study of thin indium nitride layers on InP (100) by Auger electron spectroscopy and photoluminescence
- Morphology and optical properties of p-type porous GaAs(100) layers made by electrochemical etching
- Study of porous III–V semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL): Effect of ionic bombardment and nitridation process
- Nitridation of InP(100) substrates studied by XPS spectroscopy and electrical analysis
- XPS, electric and photoluminescence-based analysis of the GaAs (100) nitridation
- Auger electronic spectroscopy and electrical characterisation of InP(100) surfaces passivated by N2 plasma
- Analysis and simulation of Au/InSb/InP diode C–V characteristic: modeling and experiments
- Electrical parameters evolution of Au/InP(100) and Au/InSb/InP(100) systems with restructuring conditions
- Study and characterization of the structures Au/Al2O3/Si and Au/Al0/Al2O3/Si
- Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency
- Effect of InSb layer on the interfacial and electrical properties in the structures based on InP
- Electrical characterization of the Au/InP(100) and Au/InSb/InP(100) structures
- Electrical study of the Au/InSb/InP system
- Characterization of the M.S structure by the surface photoelectrical voltage method
- Modelization and characterization of Au/InSb/InP Schottky systems as a function of temperature
- Passivation of III-V compounds used for metal-insulator-InP(100) structures
- Electrical characterization of alumina layers deposited by evaporation cell on Si and restructured InP substrates
Publication venues
- Applied Surface Science × 3
- Materials Science and Engineering C × 2
- Vacuum × 2
- Materials Science and Engineering B × 2
- Microelectronics Journal × 2
- Semiconductors × 1
Publications per year
- 20181
- 20161
- 20151
- 20092
- 20081
- 20071
- 20061
- 20051
- 20041
- 20023
Collaborations
Partner institutions : Université Blaise Pascal · Centre National de la Recherche Scientifique · Université Clermont Auvergne · Sigma Clermont · Aix-Marseille Université
Co-authors’ countries : Tunisia · Algeria
Co-authors
- B. Gruzza
- Christine Robert‐Goumet
- Guillaume Monier
- Boudali Akkal
- Sana Ben Khalifa
- Georges E. Bremond
- Matthieu Petit
- Christelle Varenne
- Damien Chaudanson
- S. Merle
- Mohamed Aymen Mahjoub
- François Réveret
Bibliographic data from OpenAlex (open database).
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