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F. Pascal

Affiliation : Centre National de la Recherche Scientifique · Université de Montpellier · Institut d'Électronique et des Systèmes

  • 4Publications (affiliation in France)
  • 140Total publications
  • 1623Citations
  • 15h-index

Research profile

F. Pascal has 4 indexed publications (2023–2026). Their work appears mainly in “Fluctuation and Noise Letters”, “Microelectronics Reliability” and “HAL”. Their most cited article, “Effects of X-ray and Cobalt 60 irradiations on advanced Si/SiGe:C HBTs DC characteristics” (2023), has been cited 2 times. 3 of these publications date from the last three years of activity. Their work is co-authored with at least 11 researchers, including institutions in Algeria.

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Research areas

  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Semiconductor materials and interfaces
  • Radio Frequency Integrated Circuit Design
  • Advanced Semiconductor Detectors and Materials

Publications (4)

Publication venues

  • Fluctuation and Noise Letters × 1
  • Microelectronics Reliability × 1
  • HAL × 1
  • European Conference on Radiation and Its Effects on Components and Systems × 1

Publications per year

  • 20262
  • 20251
  • 20231

Collaborations

Partner institutions : STMicroelectronics (France) · Larbi Ben M'hidi University of Oum El Bouaghi

Co-authors’ countries : Algeria

Co-authors

Bibliographic data from OpenAlex (open database).

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