Home › Researcher directory › A. Hoffmann
A. Hoffmann
Affiliation : Centre National de la Recherche Scientifique · Université de Montpellier · Institut d'Électronique et des Systèmes
- 10Publications (affiliation in France)
- 105Total publications
- 1008Citations
- 15h-index
Research profile
A. Hoffmann has 10 indexed publications (2000–2026). Their work appears mainly in “Solid-State Electronics”, “Fluctuation and Noise Letters” and “Microelectronics Reliability”. Their most cited article, “A new method for evaluating illuminated solar cell parameters” (2001), has been cited 168 times. 3 of these publications date from the last three years of activity. Their work is co-authored with at least 12 researchers, including institutions in Algeria.
Is this you? Get your research seen
Create your free DzCademia profile and add your articles: they will show up more easily on Google and in AI assistants like ChatGPT, so more people can read and cite your work.
Create my free profile Add my publicationsResearch areas
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Radiation Effects in Electronics
- Particle Detector Development and Performance
- Silicon Carbide Semiconductor Technologies
Publications (10)
- X-Ray Impact on Generation-Recombination Low-Frequency Noise Components for Advanced Si/SiGe:C HBTs
- Study of electrical and X-ray induced degradation in 55-nm BiCMOS SiGe heterojunction bipolar transistors
- Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
- Effects of X-ray and Cobalt 60 irradiations on advanced Si/SiGe:C HBTs DC characteristics
- Analysis of electroluminescence spectra of silicon and gallium arsenide p–n junctions in avalanche breakdown
- Extraction of Schottky diode parameters including parallel conductance using a vertical optimization method
- Simulation of gallium arsenide electroluminescence spectra in avalanche breakdown using self-absorption and recombination models
- Effects of adding an SiO/sub 2/ film to the rear metal/semiconductor interface on the performance of a conventional solar cell based on n/sup +/p silicon
- A new method for evaluating illuminated solar cell parameters
- La Jonction du Solaire à la Microélectronique
Publication venues
- Solid-State Electronics × 2
- Fluctuation and Noise Letters × 1
- Microelectronics Reliability × 1
- HAL × 1
- European Conference on Radiation and Its Effects on Components and Systems × 1
- Journal of Applied Physics × 1
Publications per year
- 20262
- 20251
- 20231
- 20041
- 20023
- 20011
- 20001
Collaborations
Partner institutions : STMicroelectronics (France) · Université Paul Verlaine - Metz · Supélec · Larbi Ben M'hidi University of Oum El Bouaghi · Laboratoire Matériaux, Optique, Photonique et Systèmes
Co-authors’ countries : Algeria
Co-authors
- F. Pascal
- Jean‐Pierre Charles
- Daniel Gloria
- B. Sagnes
- J. Boch
- Pascal Chevalier
- Tadec Maraine
- A. Adebabay Belie
- M. Bouhouche
- S. Haendler
- Olivier Occello
- A. Bath
Bibliographic data from OpenAlex (open database).
Why choose Dzcademia?
Profiles, articles and conference contributions: give your research a structured public presence. Integrated metadata help search engines and AI assistants identify your work and understand its references.
Comment with Google
Sign in with Google to comment directly on this page.