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B. Sagnes

Affiliation : Centre National de la Recherche Scientifique · Université de Montpellier · Institut d'Électronique et des Systèmes

• 4Publications (affiliation française)
• 100Publications au total
• 879Citations
• 15Indice h

ORCIDOpenAlex

Domaines de recherche

• Radiation Effects in Electronics
• Particle Detector Development and Performance
• Semiconductor materials and devices
• Advancements in Semiconductor Devices and Circuit Design
• Radiation Therapy and Dosimetry

Publications (4)

• X-Ray Impact on Generation-Recombination Low-Frequency Noise Components for Advanced Si/SiGe:C HBTs
  2026 · Fluctuation and Noise Letters · cité 1 fois
• Study of electrical and X-ray induced degradation in 55-nm BiCMOS SiGe heterojunction bipolar transistors
  2026 · Microelectronics Reliability
• Study of Electrical and X-ray induced degradation in BiCMOS 55-nm SiGe:C Heterojunction Bipolar Transistors
  2025 · HAL
• Effects of X-ray and Cobalt 60 irradiations on advanced Si/SiGe:C HBTs DC characteristics
  2023 · European Conference on Radiation and Its Effects on Components and Systems · cité 2 fois

Revues de publication

• Fluctuation and Noise Letters × 1
• Microelectronics Reliability × 1
• HAL × 1
• European Conference on Radiation and Its Effects on Components and Systems × 1

Publications par année

• 20262
• 20251
• 20231

Collaborations

Établissements partenaires : STMicroelectronics (France) · Larbi Ben M'hidi University of Oum El Bouaghi

Pays des co-auteurs : Algérie

Co-auteurs

• F. Pascal
• Daniel Gloria
• A. Hoffmann
• J. Boch
• Pascal Chevalier
• Tadec Maraine
• A. Adebabay Belie
• M. Bouhouche
• S. Haendler
• Olivier Occello
• J. El Beyrouthy

Données bibliographiques issues d’OpenAlex (base ouverte).